A new structure IGBT is proposed for reducing the power dissipation.It features a composite voltage-sustaining layer which includes a n-type buffer layer formed by ultra-deep diffusion and a transparent backside emitter formed by boron implantation.Working in a deep punch-through state during its normal operating condition,it still possesses all the characteristics of the robust non-punch-through IGBT (NPT-IGBT).With a chip-thickness thinner than that of the NPT-IGBT,the new structure presents a better trade-off relationship between the on-state voltage-drop and the turn-off loss.Experimental results show that the power loss of the new structure IGBT is 40% lower than that of the NPT-IGBT.
