报道了研制的 Al Ga N / Ga N微波功率 HEMT,该器件采用以蓝宝石为衬底的非掺杂 Al Ga N/ Ga N异质结构 ,器件工艺采用了 Ti/ Al/ Ni/ Au欧姆接触和 Ni/ Au肖特基势垒接触以及 Si N介质进行器件的钝化 .研制的 2 0 0μm栅宽 T型布局 Al Ga N / Ga N HEMT在 1.8GHz,Vds=30 V时输出功率为 2 8.93d Bm,输出功率密度达到 3.9W/mm ,功率增益为 15 .5 9d B,功率附加效率 (PAE)为 4 8.3% .在 6 .2 GHz,Vds=2 5 V时该器件输出功率为 2 7.0 6 d Bm ,输出功率密度为 2 .5 W/ mm ,功率增益为 10 .2 4 d B,PAE为 35 .2 % .
The development of an AIGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is pres- ented. A recessed-gate and a field-plate are used in the device processing to improve the performance of the AIGaN/GaN HEMTs. S-parameter measurements show that the frequency performance of the AIGaN/GaN HEMTs depends significantly on the operating voltage. Higher operating voltage is a key to higher power gain for the AIGaN/GaN HEMTs. The developed 2-stage power MMIC delivers an output power of more than 10W with over 12dB power gain across the band of 9-11GHz at a drain bias of 30V. Peak output power inside the band reaches 14.7W with a power gain of 13.7dB and a PAE of 23%. The MMIC chip size is only 2.0mm × 1. 1mm. This work shows superiority over previously reported X-band AIGaN/GaN HEMT power MMICs in output power per millimeter gate width and output power per unit chip size.
