Nickel fully silicided(Ni-FUSI) gate material has been fabricated on a HfO_2 surface to form a Ni-FUSI gate/HfO_2/Al(MIS) structure by using an ultra-high vacuum e-beam evaporation(EBV) method followed by a one step rapid thermal annealing(RTA) treatment.X-ray diffraction(XRD) and Raman spectroscopy were used to reveal the microstructures and electrical properties of the MIS structure.Results show that a one step post RTA treatment is enough to promote the full reaction of nickel silicide,compared with multiple RTA treatments. Furthermore,the HfO_2 gate dielectric film is sensitive to heat treatment,and multiple RTA treatments can damage the electrical properties of the HfO_2 film rather than improve them.By optimization of the sample fabrication technique,the MIS capacitor produces good high-frequency capacitance-voltage curves with a hysteresis of 30 mV, a work function of about 5.44-5.53 eV and leakage current density of only 1.45×10^(-8) A/cm^2 at -1V gate bias.
