The valence subband energies and wave functions of a tensile strained quantum well are calculated by the plane wave expansion method within the 6×6 Luttinger Kohn model.The effect of the number and period of plane waves used for expansion on the stability of energy eigenvalues is examined.For practical calculation,it should choose the period large sufficiently to ensure the envelope functions vanish at the boundary and the number of plane waves large enough to ensure the energy eigenvalues keep unchanged within a prescribed range.
A fitting process is used to measure the cavity loss and the quasi Fermi level separation for Fabry Pérot semiconductor lasers.From the amplified spontaneous emission (ASE) spectrum,the gain spectrum and single pass ASE obtained by the Cassidy method are applied in the fitting process.For a 1550nm quantum well InGaAsP ridge waveguide laser,the cavity loss of about ～24cm -1 is obtained.
To save finite-difference time-domain（FDTD） computing time, several methods are proposed to convert the time domain FDTD output into frequency domain. The Pad6 approximation with Baker＇s algorithm and the program are introduced to simulate photonic crystal structures. For a simple pole system with frequency 160THz and quality factor of 5000, the intensity spectrum obtained by the Padé approximation from a 2^8-item sequence output is more exact than that obtained by fast Fourier transformation from a 2^20-item sequence output. The mode frequencies and quality factors are calculated at different wave vectors for the photonic crystal slab from a much shorter FDTD output than that required by the FFT method, and then the band diagrams are obatined. In addition, mode frequencies and Q-factors are calculated for photonic crystal microcavity.
The band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Padé approximation.The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated.The resonant frequencies and quality factors are calculated for PCs with different defects.The numerical results show that it is possible to modulate the location,width and number of PBGs and frequencies of the localized states only by changing the dielectric constant contrast and filling factor.
