We design and fabricate a 128 × 128 AlGaAs/GaAs quantum well infrared photodetector focal plane array （FPA）. The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology. A test structure of the photodetector with a mesa size of 300μm × 300μm is also made in order to obtain the device parameters. The measured dark current density at 77K is 1.5 × 10^-3A/cm^2 with a bias voltage of 2V. The peak of the responsivity spectrum is at 8.4μm,with a cutoff wavelength of 9μm. The blackbody detectivity is shown to be 3.95 × 10^8 （cm · Hz^1/2）/W. The final FPA is flip-chip bonded on a CMOS read-out integrated circuit. The infrared thermal images of some targets at room temperature background are successfully demonstrated at 80K operating temperature with a ratio of dead pixels of less than 1%.
研制了一款基于In Ga As/Ga As P应变补偿量子阱结构的1 060 nm单横模半导体激光器,并采用金属有机物化学气相沉积（MOCVD）方法实现了外延生长。使用张应变的Ga As P势垒层对量子阱的应变进行补偿,并优化了MOCVD外延生长条件。所制备的单横模激光器的脊宽为4μm,腔长为2 mm,25℃时测得其阈值电流为23 m A,最大斜率效率为1 W/A,直流电流为500 m A时光功率为437 mW。脉冲驱动时,器件最高输出功率达到1.2 W,并未发生腔面光学灾变损伤失效。器件快慢轴发散角分别为46.3°和7.4°,65℃时,器件的输出功率为270 mW。采用高温加速老化试验对器件的可靠性进行了评估,试验器件在3 150 h内未发生失效,功率缓慢退化速率为5×10-6h-1。
