A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI process.Biased at 3 0V,the photodetector attained a responsivity of 0 38A/W at its peak response wavelength 0 93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1 0pF,and short rise time of 2 5ns.The distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon based devices to meet the needs of high speed near infrared signal detections.
