结合垂直腔面发射激光器的制备 ,详细研究了 Al As选择性湿氮氧化工艺中氧化炉温、氮气流量、水温等条件和 Al As薄层的横向氧化速率之间的关系及其对氧化结果的影响 ,给出了合理的定性解释 ,并得到了可精确控制氧化过程及其均匀性的工艺条件 .在优化的工艺条件下运用湿氮氧化制备出低阈值的 In Ga As垂直腔面发射激光器 .
Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure.Their characteristics are analyzed.The light emitters have high spectral purity of 4 8nm and high electroluminescence intensity of 0 7mW while injection current is 50mA.A 1×16 array of surface emitting light device is tested on line by probes and then used for module.The light detectors have wavelength selectivity and space selectivity.The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.
