Ta/NiFe film is deposited on Si substrate precoated with SiO_2 by magnetron sputtering.SiO_2/Ta interface and Ta_5Si_3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decomposition technique.The results show that there is a thermodynamically favorable reaction at the SiO_2/Ta interface:37Ta+15SiO_2=5Ta_5Si_3+6Ta_2O_5.The more stable products Ta_5Si_3 and Ta_2O_5 may be beneficial to stop the diffusion of Cu into SiO_2.
选用SIMOX(Separation by Implantation of Oxygen)衬底材料,对全耗尽SOI CMOS工艺进行了研究,并发出了N+多晶硅栅全耗尽SOI CMOS器件及电路工艺,获得了性能良好的器件和电路。nMOS和pMOS的驱动电流都比较大,且泄漏电流很小,在工作电压为3V时,1.2μm101级环振的单级延迟仅为50.5 ps。