Through the theoretical analysis and computer simulation,the optimized design principles for Si/SiGe PMOSFETs are given,including the choice of gate materials,the determination of Ge percentage and the profile in SiGe channel,the thickness optimization of dioxide and silicon cap layer,and the adjustment of threshold voltage.In light of them,a SiGe PMOSFET is designed and fabricated successfully.The measurements indicate that the transconductance is 45mS/mm (300K) and 92mS/mm (77K) for SiGe PMOSFET's (L=2μm),while it is 33mS/mm (300K) and 39mS/mm (77K) for Si PMOSFET.
