在 SOI(Silicon on Insulator)结构硅膜上面生长一层 Si Ge合金 ,采用类似 SOICMOS工艺制作成具有Si Ge沟道的 SOICMOS集成电路。该电路不仅具有 SOICMOS电路的优点 ,而且因为 Si Ge中的载流子迁移率明显高于 Si中载流子的迁移率 ,所以提高了电路的速度和驱动能力。另外由于两种极性的 SOI MOSFET都采用 Si Ge沟道 ,就避免了只有 SOIPMOSFET采用 Si Ge沟道带来的选择性生长 Si Ge层的麻烦。采用二维工艺模拟得到了器件的结构 ,并以此结构参数进行了器件模拟。模拟结果表明 ,N沟和 P沟两种 MOSFET的驱动电流都有所增加 。
A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI process.Biased at 3 0V,the photodetector attained a responsivity of 0 38A/W at its peak response wavelength 0 93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1 0pF,and short rise time of 2 5ns.The distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon based devices to meet the needs of high speed near infrared signal detections.
在通常适合于制作埋沟 Si Ge NMOSFET的 Si/弛豫 Si Ge/应变 Si/弛豫 Si Ge缓冲层 /渐变 Ge组分层的结构上 ,制作成功了 Si Ge PMOSFET.这种 Si Ge PMOSFET将更容易与 Si Ge NMOSFET集成 ,用于实现 Si Ge CMOS.实验测得这种结构的 Si Ge PMOSFET在栅压为 3.5 V时最大饱和跨导比用作对照的 Si PMOS提高约 2倍 ,而与常规的应变 Si
