Deposition of diamond inside the trenches or microchannels by chemical vapor deposition （CVD） is limited by the diffusion efficiency of important radical species for diamond growth （H, CH3） and the pore depth of the substrate template. By ultrasonic seeding with nanodiamond suspension, three-dimensional （3D） penetration structure diamond was successfully deposited in cylindrical microchannels of Cu template by hot-filament chemical vapor deposition. Micro-Raman spectroscopy and scanning electron microscopy （SEM） were used to characterize diamond film and the effects of microchannel depth on the morphology, grain size and growth rate of diamond film were comprehensively investigated. The results show that diamond quality and growth rate sharply decrease with the increase of the depth of cylindrical microchannel. Individual diamond grain develops gradually from faceted crystals into micrometer cluster, and finally to ballas-type nanocrystalline one. In order to modify the rapid decrease of diamond quality and growth rate, a new hot filament apparatus with a forced gas flow through Cu microchannels was designed. Furthermore, the growth of diamond film by new apparatus was compared with that without a forced gas flow, and the enhancement mechanism was discussed.
Wurtzite aluminum nitride（AlN） films were deposited on Si（100） wafers under various sputtering pressures by radio-frequency（RF） reactive magnetron sputtering. The film properties were investigated by XRD, SEM, AFM, XPS and nanoindenter techniques. It is suggested from the XRD patterns that highly c-axis oriented films grow preferentially at low pressures and the growth of（100） planes are preferred at higher pressures. The SEM and AFM images both reveal that the deposition rate and the surface roughness decrease while the average grain size increases with increasing the sputtering pressure. XPS results show that lowering the sputtering pressure is a useful way to minimize the incorporation of oxygen atoms into the AlN films and hence a film with closer stoichiometric composition is obtained. From the measurement of nanomechanical properties of AlN thin films, the largest hardness and elastic modulus are obtained at 0.30 Pa.
