奥氏体不锈钢是超临界水冷堆的堆内构件的候选材料之一,本文实验以奥氏体不锈钢AL-6XN为对象,研究了氢离子辐照对奥氏体钢微观结构的影响.在290℃和380℃下用100keV的H+2辐照,辐照剂量分别为0.5dpa和1.0dpa(displacement per atom).在290℃下,随辐照剂量增加,位错环平均直径从3.8nm增加到5.6nm,数密度略有下降.在380℃下辐照,产生了大尺寸位错环,随着剂量增加,位错环平均直径和数密度显著增加.实验结果表明,氢离子辐照AL-6XN不锈钢产生的缺陷主要是位错环,随辐照剂量增加,产生的位错环尺寸增大,提高辐照温度有利于位错环的迁移和聚集长大.
GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates.In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures.Moreover,{111} φ scans with χ at 55° reveal the abnormal distribution of Bragg diffractions.The extra intensity maxima in the pole figures shows that the process of twinning plays a dominating role during the growth process.It is suggested that the polarity of {111} facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates.It is proposed that twinning is prone to occurring on {111}B,N-terminated facets.
