A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltage of 12V and 175MHz.It is fabricated by using the terraced gat e structure and refractory molybdenum (Mo) gate technology.
A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.The effects of ionizing radiation and transient high dose rate radiation of the power VDMNOSFET are also presented.Good radiation hardening performance is obtained,compared with the conventional power VDMOSFET.For the specified 200V VDMNOSFET,the threshold voltage shifts is only -0 5V at a Gamma dose of 1Mrad(Si) with +10V gate bias;the transconductance is degraded by 10% at a Gamma dose of 1Mrad(Si);and no burnout failures occur at the transient high dose rate of 1×10 12 rad(Si)/s.It is demonstrated that the ionizing radiation tolerance and burnout susceptibilities of the power MOSFET are improved significantly by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.
