Highly conductive boron-doped hydrogenated microcrystalline silicon （μc-Si： H） films and solar cells are pre- pared by plasma enhanced chemical vapour deposition （PECVD）. The effects of diborane concentration, thickness and substrate temperature on the growth and properties of B-doped layers and the performance of solar cells with high deposited rate i-layers are investigated. With the optimum p-layer deposition parameters, a higher efficiency of 5.5% is obtained with 0.78nm/s deposited i-layers. In addition, the carriers transport mechanism of p-type μc-Si： H films is discussed.
利用电子束蒸发技术在常温下制备ITO透明导电膜,在这种条件下很难得到性能良好的透明导电膜,试图通过研究快速光热退火下退火温度、退火时间对其性能的影响,致力于在低温退火工艺下改善薄膜性能。通过对退火后样品禁带宽度的计算得出随着退火温度或退火时间的增大,禁带宽度逐渐增大;对样品的微结构分析发现随着退火温度的提高或退火时间的延长,样品的微结构致密性提高,各晶向面间距和晶格常数逐渐趋于标准的晶体;但退火温度过高或退火时间过长反而不利于透明导电膜性能的提高,所以选取合适的退火温度和退火时间是光退火下透光性和导电性都得到提升的关键。在200°C的退火温度下,退火12 m in可实现样品的透光率在可见光范围内达到82%,电阻率ρ=2.3×1-0 3Ω.cm。
