The present paper employs the direct simulation Monte Carlo (DSMC) method to study the Rayleigh-Bénard flows, where the temperature ratio of the upper to lower plate is fixed to 0.1. For a Knudsen number (Kn) of 0.01, as the Rayleigh number (Ra) increases, the flow changes from the thermal conductive state to the convective state at about Ra=1700, and the calculated relation of heat flux through the lower plate versus Ra is in good agreement with classical experimental and theoretical results. For Kn=0.05, the thermal conductive state remains stable, and the increase of Ra cannot trigger thermal instability.
Thickness and component distributions of large-area thin films are an issue of in-ternational concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal reso-nators, deposited film thickness distribution measured by Rutherford backscat-tering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.
