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国家高技术研究发展计划(2009AA011605)

作品数:27 被引量:16H指数:2
相关作者:谈熙闵昊洪志良闫娜曾真更多>>
相关机构:复旦大学武汉大学公安部第三研究所更多>>
发文基金:国家高技术研究发展计划国家自然科学基金国家科技重大专项更多>>
相关领域:电子电信自动化与计算机技术电气工程化学工程更多>>

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27 条 记 录,以下是 1-10
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Analysis and design of a 1.8-2.7 GHz tunable 8-band TDD LTE receiver front-end
2011年
This paper describes the analysis and design of a 0.13 #m CMOS tunable receiver front-end that supports 8 TDD LTE bands, covering the 1.8-2.7 GHz frequency band and supporting the 5/10/15/20 MHz bandwidth and QPSK/16QAM/64QAM modulation schemes. The novel zero-IF receiver core consists of a tunable narrow- band variable gain low-noise amplifier (LNA), a current commutating passive down-conversion mixer with a 2nd order low pass trans-impedance amplifier, an LO divider, a rough gain step variable gain pre-amplifier, a tunable 4th order Chebyshev channel select active-RC low pass filter with cutoff frequency calibration circuit and a fine gain step variable gain amplifier. The LNA can be tuned by reconfiguring the output parallel LC tank to the responding frequency band, eliminating the fixed center frequency multiple LNA array for a multi-mode receiver. The large various gain range and bandwidth of the analog baseband can also be tuned by digital configuration to satisfy the specification requirement of various bandwidth and modulation schemes. The test chip is implemented in an SMIC 0.13μm 1PSM CMOS process. The full receiver achieves 4.6 dB NF, -14.5 dBm out of band IIP3, 30-94 dB gain range and consumes 54 mA with a 1.2 V power supply.
王肖王玉吉王伟威常学贵闫娜谈熙闵昊
关键词:RECEIVERTUNABLECMOS
应用于脉冲式超宽带接收机的低功耗欠采样电路
2013年
给出了一款应用于脉冲式超宽带(IR-UWB)接收机的低功耗采样电路设计方案。该采样电路使用0.13μmCMOS工艺,采样速率达到了4.224GS/s。在设计中,应用了等效采样技术来提高采样电路的整体采样速率。同时使用了失调校准技术来消除各通道本身以及各通道之间的失调电压,该失调校准技术不需要前置放大器,不消耗静态电流。该采样电路只需要单相位时钟,而一般传统的采样电路需要差分时钟。该采样电路能够在4.224GS/s高采样速率时依然保持高的分辨率(1mV),突破了传统采样电路速度与精度之间不可调和的矛盾。在1.2V电源电压下,该采样电路功耗2.4mW,有效面积为0.4mm2。
顾纯辰邵轲洪志良
关键词:欠采样
Analysis and implementation of derivative superposition for a power amplifier driver
2012年
A new expression is proposed to analyze the linearization effectiveness of derivative superposition (DS) with large and small signal inputs, and different optimization methods of DS are found for different input magni tudes. A power amplifier driver (PAD) with largesignal optimized DS was implemented in 0.13/,m technology within a reconfigurable RF transmitter. The PAD is compatible with the GSM band at 900 MHz and the WCDMA band at 1.95 GHz, and it has a gain range of 44 dB with a step of 2 dB. Measurement results show that the over all OIP3 of the transmitter is better than 19 dBm, and the output referred 1dB compression point is better than 7.5 dBm.
李一雷韩科峰闫娜谈熙闵昊
关键词:AMPLIFIERLINEARITY
用于射频SOC芯片的低噪声高电源抑制比LDO被引量:6
2011年
设计了一种能够为射频芯片提供低噪声、高PSRR、全集成LDO。采用SMIC 0.18μm RF工艺实现,芯片有效面积0.11 mm^2。测试结果表明:当输出电流从0跳变为20 mA时,最大Ripple为100 mV,稳定时间2μs;当输出电流为20mA,频率到1 MHz的情况下,PSRR<-30 dB;从1~100 kHz的频率范围内输出电压积分噪声为21.4μVrms;在整个工作电压范围内(2.1~3.3 V)输入电压调整率<0.1%;在整个输出电流的范围内(0~20 mA),负载调整率<0.44%;LDO消耗了380μA的电流(其中Bandgap消耗了260μA的电流)。
温晓珂谈熙闵昊
关键词:无片外电容低压降线性稳压器电源抑制比
应用于接收机AGC环路中的SAR ADC被引量:2
2011年
提出了一种应用于射频接收机自动增益控制(AGC)环路中的10位1 MS/s逐次逼近型模数转换器(SARADC)。动态高精度比较器和自举开关技术应用在设计中,在保证转换速度和精度的同时,降低了电路功耗。芯片采用SMIC 0.13μm 1P8M RF CMOS工艺实现。测试结果表明,在1.2 V电源电压下,采样率为1 MS/s时的芯片功耗(P)仅为148μW。当输入信号频率为101 kHz时,信噪失真比(SNDR)为54 dB,有效位数(ENOB)为8.7 bit,无杂散动态范围(SFDR)为58.1 dB。
曾真董传盛谢敏谈熙
关键词:射频接收机自动增益控制
Adaptive IF selection and IQ mismatch compensation in a low-IF GSM receiver被引量:1
2012年
This paper presents an algorithm that can adaptively select the intermediate frequency(IF) and compensate the IQ mismatch according to the power ratio of the adjacent channel interference to the desired signal in a low-IF GSM receiver.The IF can be adaptively selected between 100 and 130 kHz.Test result shows an improvement of phase error from 6.78°to 3.23°.Also a least mean squares(LMS) based IQ mismatch compensation algorithm is applied to improve image rejection ratio(IRR) for the desired signal along with strong adjacent channel interference.The IRR is improved from 29.1 to 44.3 dB in measurement.The design is verified in a low-IF GSM receiver fabricated in SMIC 0.13μm RF CMOS process with a working voltage of 1.2 V.
张成王丽芳谈熙闵昊
CMOS high linearity PA driver with an on-chip transformer for W-CDMA application
2011年
A fully integrated high linearity differential power amplifier driver with an on-chip transformer in a standard 0.13-μm CMOS process for W-CDMA application is presented.The transformer not only accomplishes output impedance matching,but also acts as a balun for converting differential signals to single-ended ones.Under a supply voltage of 3.3 V,the measured maximum power is larger than 17 dBm with a peak power efficiency of 21%.The output power at the 1-dB compression point and the power gain are 12.7 dBm and 13.2 dB,respectively. The die size is 0.91×1.12 mm;.
付健梅年松黄煜梅洪志良
关键词:CMOS
A 4th-order reconfigurable analog baseband filter for software-defined radio applications
2011年
This paper presents a 4th-order reconfigurable analog baseband filter for software-defined radios.The design exploits an active-RC low pass filter(LPF) structure with digital assistant,which is flexible for tunability of filter characteristics,such as cut-off frequency,selectivity,type,noise,gain and power.A novel reconfigurable operational amplifier is proposed to realize the optimization of noise and scalability of power dissipation.The chip was fabricated in an SMIC 0.13μm CMOS process.The main filter and frequency calibration circuit occupy 1.8×0.8 mm;and 0.48×0.25 mm;areas,respectively.The measurement results indicate that the filter provides Butterworth and Chebyshev responses with a wide frequency tuning range from 280 kHz to 15 MHz and a gain range from 0 to 18 dB.An IIP3 of 29 dBm is achieved under a 1.2 V power supply.The input inferred noise density varies from 41 to 133 nV/(Hz);according to a given standard,and the power consumptions are 5.46 mW for low band(from 280 kHz to 3 MHz) and 8.74 mW for high band(from 3 to 15 MHz) mode.
王伟威常学贵王肖韩科锋谈熙闫娜闵昊
关键词:RECONFIGURABLE
A baseband LPF for GSM,TD-SCDMA and WCDMA multi-mode transmitters
2011年
This paper describes a low-pass reconfigurable baseband filter for GSM, TD-SCDMA and WCDMA multi-mode transmitters. To comply with 3GPP emission mask and limit TX leakage at the RX band, the out- of-band noise performance is optimized. Due to the distortion caused by the subthreshold leakage current of the switches used in capacitor array, a capacitor bypass technique is proposed to improve the filter's linearity. An automatic frequency tuning circuit is adopted to compensate the cut-off frequency variation. Simulation results show that the filter achieves an in-band input-referred third-order intercept point (IIP3) of 47 dBm at 1.2-V power supply and the out-of-band noise can meet TX SAW-less requirement for WCDMA & TD-SCDMA. The baseband filter incorporates -40 to 0 dB programmable gain control that is accurately variable in 0.5 dB steps. The filter's cut-off frequency can be reconfigured for GSM/TD-SCDMA/WCDMA multi-mode transmitter. The implemented baseband filter draws 3.6 mA from a 1.2-V supply in a 0.13 μm CMOS process.
余永长韩科锋王丽芳谈熙闵昊
A low-power triple-mode sigma-delta DAC for reconfigurable(WCDMA/TD-SCDMA/GSM) transmitters被引量:1
2011年
A sigma-delta (∑A) DAC with channel filtering for multi-standard wireless transmitters used in the software-defined-radio (SDR) system is presented. The conversion frequency, transfer function of the digital filter and the ∑A modulator, word-length of the IDAC and cut-off frequency of the analog reconstruction filter can be digitally programmed to satisfy specifications of WCDMA, TD-SCDMA and GSM standards. The ∑A DAC fabricated in SMIC 0.13μm CMOS process occupies a die area of 0.72 mm2, while consuming 5.52/4.82/3.04 mW in WCDMA/TD-SCDMA/GSM mode from a single 1.2-V supply voltage. The measured SFDR is 62.8/60.1/ 75.5 dB for WCDMA/TD-SCDMA/GSM mode, respectively.
邱东易婷洪志良
关键词:LOW-POWERRECONFIGURABLE
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