The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.
We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.
The collective charge density excitations in a free-standing nanorod with a two-dimensional parabolic quantum well are investigated within the framework of Bohm-Pine＇s random-phase approximation in the two-subband model.The new simplified analytical expressions of the Coulomb interaction matrix elements and dielectric functions are derived and numerically discussed.In addition,the electron density and temperature dependences of dispersion features are also investigated.We find that in the two-dimensional parabolic quantum well,the intrasubband upper branch is coupled with the intersubband mode,which is quite different from other quasi-one-dimensional systems like a cylindrical quantum wire with an infinite rectangular potential.In addition,we also find that higher temperature results in the intersubband mode（with an energy of 12 meV（～ 3 THz）） becoming totally damped,which agrees well with the experimental results of Raman scattering in the literature.These interesting properties may provide useful references to the design of free-standing nanorod based devices.
