We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.
A 1 ：2 demultiplexer is designed and realized in standard 0. 18μm CMOS technology. A novel high-speed and low-voltage latch is used to realize the core circuit cell. Compared to the traditional source-coupled FET logic structure latch, its power supply voltage is lower and the speed is faster. In addition, the negative feedback is used in the buffer circuit to widen its bandwidth. Measurement results show that the chip can work at the data rate of 20Gb/ s. The supply voltage is 1.8V and the current,including the buffer circuit, is 72mA.
This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.
