The influences of the anisotropy of the outer spherically anisotropic （SA） layer on the far-field spectra and near- field enhancements of the silver nanoshells are investigated by using a modified Mie scattering theory. It is found that with the increase of the anisotropic value of the SA layer, the dipole resonance wavelength of the silver nanoshell first increases and then decreases, while the local field factor （LFF） reduces. With the decrease of SA layer thickness, the dipole wavelength of the silver nanoshell shows a distinct blue-shift. When the SA layer becomes very thin, the modulations of the anisotropy of the SA layer on the plasmon resonance energy and the near-field enhancement are weakened. We further find that the smaller anisotropic value of the SA layer is helpful for obtaining the larger near-field enhancement in the Ag nanoshell. The geometric average of the dielectric components of the SA layer has a stronger effect on the plasmon resonance energy of the silver nanoshell than on the near-field enhancement.
本文基于时域有限差分方法(finite difference time domain,FDTD)研究了入射光波长、入射光偏振方向、纳米管几何形状、管壁厚度及内核和包埋介质的变化对椭圆截面金纳米管近场分布特征的影响.研究发现,入射光波长为纳米管等离激元共振波长时,纳米管近场增强最大;入射光偏振方向与椭圆长轴夹角的增加会导致管内的场强迅速增大;椭圆管半短轴变大可以调节纳米管场强分布从两端高、中间低变化为均匀分布;内核和包埋介质介电常数的增大均会使得纳米管内部及周围场强逐渐减弱.
The n-type silicon integrated-back contact（IBC） solar cell has attracted much attention due to its high efficiency,whereas its performance is very sensitive to the wafer of low quality or the contamination during high temperature fabrication processing, which leads to low bulk lifetime τbulk. In order to clarify the influence of bulk lifetime on cell characteristics, two-dimensional（2D） TCAD simulation, combined with our experimental data, is used to simulate the cell performances, with the wafer thickness scaled down under various τbulk conditions. The modeling results show that for the IBC solar cell with high τbulk,（such as 1 ms-2 ms）, its open-circuit voltage V oc almost remains unchanged, and the short-circuit current density J sc monotonically decreases as the wafer thickness scales down. In comparison, for the solar cell with low τbulk（for instance, 〈 500 μs） wafer or the wafer contaminated during device processing, the V oc increases monotonically but the J sc first increases to a maximum value and then drops off as the wafer＇s thickness decreases. A model combing the light absorption and the minority carrier diffusion is used to explain this phenomenon. The research results show that for the wafer with thinner thickness and high bulk lifetime, the good light trapping technology must be developed to offset the decrease in J sc.
Interdigitated back contact-heterojunction （IBC-HJ） solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field （FSF） offered by stack of n-type doped and intrinsic amorphous silicon （a-Si） layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the overstrong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon （n-a-Si） layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon （i-a-Si） layer should be as thin as possible with an energy band gap （Es） larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density.
Rui JIAKe TAOQiang LIXiaowan DAIHengchao SUNYun SUNZhi JINXinyu LIU
