The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing(LA polySi).The effects of passivation time,passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed.It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.
A technique to improve and accelerate aluminum induced crystallization（AIC） by using hydrogen plasma is proposed.Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC.This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm^2/（V·s）.The possible mechanism of AIC assisted by hydrogen radicals is also discussed.
