Stoichiometric and amorphous Er2O3 films were deposited on Si(001) substrates by radio frequency magnetron technique. Spectroscopic ellipsometry measurement showed that the refractive index of the Er2O3 film in wavelength region of 400-1000 nm was between 1.6-1.7. The reflectivity of the Er2O3 films decreased greatly with respect to that from the uncoated Si substrates. The absorption coefficient of the Er2O3 film indicated that it had an energy gap larger than 4.5 eV. The obtained characteristics indicated that Er2O3 films could be promising candidates for anti-reflection coatings in solar cells.
同步加速器放射光致核裂变光谱学被用来在 Si 上在取向附生的生长期间学习 Er2O3/Si (001 ) 接口和电影的形成过程。在 O 核心级的有约束力的精力的移动被发现被移动在 Er2O3 原子价乐队最大值伴随了。这移动取决于氧化物层厚度和界面的结构。界面的层在 Si 上在 Er2O3 电影的起始的生长被观察，它应当被归因于效果嗯原子催化氧化效果。
