ZnO thin films were deposited on n-Si (111) at various substrate temperatures and oxygen pressures by pulsed laser deposition (PLD) using a Nd∶YAG laser with the wavelength of 1064 nm. X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the microstructure, optical property and morphology of the ZnO thin films. A comparatively optimal crystallized ZnO thin film was obtained at the substrate temperature of 600 ℃ in oxygen pressure of 50 mTorr. The intensity of the luminescence strongly depends on the stoichiometry of the film as well as the crystalline quality.
He Jianting Zhuang Huizhao Xue Chengshan Tian Deheng Wu Yuxin Xue Shoubin Hu Lijun
ZnO thin films are deposited on n-Si(111) substrates by pulsed laser deposition(PLD) system. Then the samples are annealed at different temperatures in air ambient and their properties are investigated particularly as a function of annealing temperature. The microstructure, morphology and optical properties of the as-grown ZnO films are studied by X-ray diffraction(XRD), atomic force microscope(AFM), Fourier transform infrared spectroscopy(FTIR) and photoluminescence(PL) spectra. The results show that the as-grown ZnO films have a hexagonal wurtzite structure with a preferred c-axis orientation. Moreover, the diameters of the ZnO crystallites become larger and the crystal quality of the ZnO films is improved with the increase of annealing temperature.
ZHUANG Hui-zhao XUE Shou-bin XUE Cheng-shan HU Li-jun LI Bao-li ZHANG Shi-ying
The behavior of Ti based on Si(111) in oxygen under high temperatures(700 ℃, 800 ℃, 900 ℃, 1 000 ℃ and 1 100 ℃) is reported. X-ray diffraction(XRD) and Fourier transform infrared spectroscopy(FTIR) are used to analyze the structure and composition of the samples annealing at different temperatures in oxygen ambience. It is found that raising temperature is helpful to the formation of both TiSi2 and TiO2 and helpful to the diffusion of Ti to Si substrate.
研究了 Ga_2O_3/Al_2O_3 膜反应自组装制备 GaN 薄膜。首先利用磁控溅射法在硅衬底上制备 Ga_2O_3/Al2O3膜,再将Ga_2O_3/Al_2O_3 膜在高纯氨气气氛中氨化反应得到了 GaN 薄膜。用 X 射线衍射(XRD),X 光光电子能谱(XPS)、扫描电镜(SEM)、透射电镜(TEM)和 荧光光谱(PL)对样品进行结构、组分、形貌和发光特性的分析。测试结果表明:用此方法得到了六方纤锌矿结构的 GaN 晶体膜。
ZnO thin films were deposited on n-Si (111) at various substrate temperatures by pulsed laser deposition (PLD). X-ray diffraction (XRD), photoluminescence (PL), Fourier transform infrared spectrophotometer (FTIR), and scanning electron microscopy (SEM) were used to analyze the structure, morphology, and optical property of the ZnO thin films. An optimal crystallized ZnO thin film was obtained at the substrate temperature of 600°C. A blue shift was found in PL spectra due to size confinement effect as the grain sizes decreased. The surfaces of the ZnO thin films were more planar and com- pact as the substrate temperature increased.
HE Jianting ZHUANG Huizhao XUE Chengshan WANG Shuyun HU Lijun XUE Shoubin
