Hydrogen is a ubiquitous element in semiconductor processing and particularly in amorphous and microcrystalline silicon where it plays a crucial role in the growth processes as well as in the material properties. Because of its low mass it can easily diffuse through the silicon network and leads to the passivation of dangling bonds but it may also play a role in the stabilization of metastable defects. Thus a lot of work has been devoted to the study of hydrogen diffusion, bonding and structure in disordered semiconductors. The sequence, deposition-exposure to H plasma-deposition was used to fabricate the microcrystalline emitter. A proper atomic H pretreatment of c-Si surface before depositions i layer was expected to clean the surface and passivatates the surface states, as a result improing the device parameters. In this study, H2 pretreatment of c-si surface was used at different time, power and temperature. It is found that a proper H pretreatment improves passivation of c-si surface and improves the device parameters by AFM and testing I-V.
Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ITO films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ITO films at different degree. The maximum transmittance of the obtained ITO films in the visible range is over 92%, and the low resistivity for the ITO films are about 3.85×10-4 Ω·cm at 80 ℃, 80 W after annealing.
