By combining resonant tunneling spectra with capacitance-voltage (C-V) characteristics under photo-excitation, we have developed photo-excited, capacitance-sensitive resonant tunneling spectrum (PC-RTS) for probing the quantized levels of quantum wells in valence band. Inter-well tunneling events have been identified and are in good agreement with the calculated level scheme in the valence band of a quantum well-barrier-quantum well heterostructure. Compared to conventional resonant tunneling spectrum, our method shows remarkable advantages in higher sensitivity for discriminating electronic structures.
WANG LiGuo ZHENG HouZhi MENG KangKang ZHAO JianHua
This paper describes an n-i-p-i-n model heterostructure with a manganese （Mn）-doped p-type base region to check the stability of a positively charged manganese A＋Mn centre with two holes weakly bound by a negatively charged 3dS（Mn） core of a local spin S = 5/2 in the framework of the effective mass approximation near the F critical point （k -0）. By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre A＋Mn are calculated within a hole concentration range from 1 ×10^16 cm-3 to 1 × 10^17 cm^-3, which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the neutral AMn centre is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A＋Mn centre varies from 9.27 meV to 4.57 meV. We propose that the presence of the A＋Mn centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the A＋Mn centre since a high frequency dielectric constant of ε∞ = 10.66 can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A＋Mn centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors.
Photoluminescence (PL) polarization of a spin ensemble was examined over a wide excitation wavelength range from 520 nm to 700 nm and a temperature range from 3.5 K to 300 K after it transfers from a (AlGa)As barrier layer and eventually quenches irradiatively in a GaAs quantum well (QW).A highest PL circular polarization of 30% can be kept at temperatures up to 120 K,while its room temperature value reaches about 17%.It is found that the main features of the optical spin orientation in bulk Al 0.27 Ga 0.73 As materials can be reproduced in terms of the wavelength dependence of PL polarization degree,as the spin polarized ensemble transfers and relaxes into GaAs QW.The transient of PL polarization degree also indicates that a dense spin ensemble collected from the barrier region is in favor of conserving its polarization in GaAs QW as evidenced by a rising temporal response.
An explicit expression of reflection magnetic circular dichroism （RMCD） has been derived, taking into account the interference effect that arises from multiple internal reflections in an air/Ga1-xMnxAs/GaAs dielectric layered system. It unambiguously shows that the RMCD signal is composed by three terms. In addition to the conventional term, which is sufficient in the absence of interference, an oscillatory term is required. Both of them are related to the imaginary part εxy of the off-diagonal element of the dielectric tensor. One also becomes aware that in this case RMCD is not actually determined only by the imaginary part εxy of the off-diagonal element of the dielectric tensor, as has been widely accepted. In fact, the real part εxy of the off-diagonal element will substantially mix into the measured RMCD results by another oscillatory cos θ form. It can even reverse the sign of RMCD, when the Gal_xMnxAs layer becomes thicker. The main aspects of these predictions were used to reasonably explain the RMCD results measured in three different types of samples. Our work will bring about a reconsideration of how to correctly explain RMCD results.
Electric luminescence and its circular polarization in a Co2 MnAl injector-based light emitting diode （LED） has been detected at the transition of e–A0 C , where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p ＋ -GaAs layer. The large volume of the p ＋ -GaAs layer can facilitate the detection of weak electric luminescence （EL） from e–A 0C emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p＋ -GaAs layer, where the spin polarization of injected electrons is destroyed by a very effective electron–hole exchange scattering （BAP mechanism）, the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.
