Ballistic n-type carbon nanotube(CNT)-based field-effect transistors(FETs) have been fabricated by contacting semiconducting single-walled CNTs(SWCNTs) using Sc or Y.The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator.The CNT FETs outperformed n-type Si metal-oxide-semiconductor(MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS FETs.Together with the demonstration of ballistic p-type CNT FETs using Pd contacts,this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor(CMOS) devices and integrated circuits.Taking full advantage of the perfectly symmetric band structure of the semiconductor SWCNT,a perfect SWCNT-based CMOS inverter was demonstrated,which had a voltage gain of over 160.Two adjacent n-and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons(3000 cm2 V-1 s-1) and holes(3300 cm2 V-1 s-1).The CNT FETs also had excellent potential for high-frequency applications,such as a high-performance frequency doubler.
Semiconducting carbon nanotubes(CNTs) possess outstanding electrical and optical properties because of their special one-dimen-sional(1D) structure.CNTs are direct bandgap materials,which makes them ideal for use in optoelectronic devices,e.g.light emitters and light detectors.Excitons determine their light absorption and light emission processes due to the strong Coulomb interactions between electrons and holes in CNTs.In this paper,we review recent progress in CNT photodetectors,photovoltaic devices and light emitters.In particular,we focus on the doping-free CNT optoelectronic devices developed by our group in recent years.
