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国家自然科学基金(s90607022)

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Unipolar resistive switching of Au^+-implanted ZrO_2 films被引量:1
2009年
The resistive switching characteristics of Au+-implanted ZrO2 films are investigated. The Au/Cr/Au+ -implanted-ZrO2/n+-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au+-implanted-ZrO2/n+-Si structure shows good retention characteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.
刘琦龙世兵管伟华张森刘明陈军宁
关键词:RRAMZRO2
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