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国家自然科学基金(50572090)

作品数:39 被引量:132H指数:7
相关作者:周万城罗发朱冬梅李智敏苏晓磊更多>>
相关机构:西北工业大学西安建筑科技大学西安电子科技大学更多>>
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39 条 记 录,以下是 1-10
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LiMn_2O_4正极材料的合成及循环稳定性
2006年
根据Li_2CO_3/MnO_2混合粉体的热重–差热分析,利用Ozawa法计算出混合粉体反应过程中各个阶段的活化能,据此在不同的预热处理温度条件下合成出正极材料LiMn_2O_4,对LiMn_2O_4材料进行了X射线衍射分析、扫描电镜观察和电化学性能检测。优化了工艺参数,确定的最佳合成工艺参数为600℃预保温和830℃保温12h。该工艺合成的LiMn_2O_4粉体具有尖晶石结构和良好的形貌。组装成的电池在常温下循环时,初始放电容量为122(mA.h)/g,20次循环后容量保持在96%左右。
李智敏杜红亮苏晓磊罗发朱冬梅周万城
关键词:锰酸锂正极材料固相反应合成活化能循环性能
合成条件对纳米SiC介电性能的影响被引量:2
2007年
用蔗糖、SiO2、Al2O3溶胶,利用碳热还原法合成了碳化硅粉体。研究结果表明,在1450℃有少量碳化硅合成。随着合成温度的提高,合成产物逐步由非晶态转化碳化硅;随着合成产物中碳化硅含量的升高,合成粉末的复介电常数增大。与合成的纯碳化硅相比,添加少量Al2O3溶胶后合成的碳化硅的复介电常数明显升高,其原因在于Al、O分别替代Si、C,导致SiC晶格中出现带电缺陷所致。在N2气氛中合成的碳化硅的复介电常数明显高于Ar气氛中合成的SiC的复介电常数,这是由于N原子固溶到SiC晶格中产生带电缺陷引起的。添加较多Al2O3溶胶后,合成产物的复介电常数的实部、虚部低于添加少量Al2O3溶胶时的合成产物的复介电常数的实部、虚部。分析认为,添加较多Al2O3溶胶后,合成产物中出现一定数量的Al2O3,它的复介电常数的实部、虚部均低于SiC的,从而导致合成产物的复介电常数降低。
罗发朱冬梅苏晓磊李智敏周万城
关键词:碳化硅复介电常数溶胶-凝胶掺杂
氮化硅多孔陶瓷的制备及微波介电性能研究被引量:15
2006年
通过添加成孔剂,采用反应烧结工艺制备出具有不同气孔率的氮化硅多孔陶瓷。采用阿基米德法、三点弯曲法测试了材料的密度、气孔率及抗弯强度。用XRD及扫描电镜对相组成和显微结构进行了研究,用谐振腔法测试了该氮化硅陶瓷在9360 MHz频率的微波介电特性。结果表明,随着试样中气孔率的增加,试样的介电常数下降;在Si粉中添加α-Si3N4粉后,虽能提高氮化率,改善组织结构,但外加Si3N4和基体生产的Si3N4存在活性差异,两者结合不紧密,使强度降低;加入α-Si3N4粉使晶相组成中Si2ON2的含量降低,能够改善试样的介电性能。
李军奇罗发朱冬梅周万城
关键词:氮化硅多孔陶瓷微波介电性能
Mechanical and dielectric properties of Ni/Al_2O_3 composites
2007年
Ni/Al2O3 composites were prepared by hot pressing approach. The relationship between their microstructure,mechanical,dielectric and magnetic properties with Ni particle content was studied. By increasing the amount of metal in the composite,the relative density and the bending strength decrease gradually. The possible reason is that non-wetting between Ni and alumina in the preparation results in weak adhesion of the Ni/Al interface. For the composites,the maximum fracture toughness is 6.4 MPa· m1/2,which is about 25% higher than that of pure alumina ceramic. The increase in toughness of the Ni/Al2O3 composites is due to the deformation of nickel particles. The complex dielectric constant measurements indicate that the real part and the imaginary part increase greatly with the Ni content in the frequency range of 8.2-12.4 GHz. The real part and the imaginary part of complex permeability of the composites also increase with increasing Ni content.
罗发薛晖朱冬梅周万城
关键词:介电性能
碳化硅高温吸收剂的研究现状被引量:15
2007年
综述了SiC的性质和作为高温吸收剂的吸波性能,并对掺杂可引起其电学性能的改善作了一定的阐述。论述了合成纳米SiC吸收剂粉末的制备方法:化学气相沉积(CVD)法、激光法、溶胶-凝胶和碳热还原法,分析了它们产生微波损耗的机理。
李智敏杜红亮罗发苏晓磊周万城
关键词:SIC掺杂吸波材料
Dielectric properties of doped silicon carbide powder by thermal diffusion
2007年
The doped SiC powders were prepared by the thermal diffusion process in nitrogen atmosphere at 2 000 ℃. Graphite film with holes was used as the protective mask. The dielectric properties of the prepared SiC powders at high frequencies were investigated. The complex permittivity of the undoped and doped SiC powders was measured within the microwave frequency range from 8.2 to 12.4 GHz. The XRD patterns show that before and after heat treatment no new phase appears in the samples of undoped and nitrogen-doped,however,in the aluminum-doped sample the AlN phase appears. At the same time the Raman spectra indicate that after doping the aluminum and nitrogen atoms affect the bond of silicon and carbon. The dielectric real part(ε′) and imaginary part(ε") of the nitrogen-doped sample are higher than those of the other samples. The reason is that in the nitrogen-doped the N atom substitutes the C position of SiC crystal and induces more carriers and in the nitrogen and aluminum-doped the concentration of carriers and the effect of dielectric relaxation will decrease because of the aluminum and nitrogen contrary dopants.
苏晓磊李智敏罗发王晓艳朱冬梅周万城
关键词:碳化硅热扩散介电性能电介质
Synthesis and microwave dielectric properties of boron doped SiC powder by sol-gel method
2007年
Nano-SiC powders doped by B were synthesized through the carbothermal reduction of xerogels containing the tributyl borate. The results show that the 3C-SiC with minor phase of 6H-SiC is generated at 1 700 ℃,and that there are not the characteristic peaks of any boride in the XRD patterns,which indicates that the boron is available only on the crystallization of 3C-SiC. The Raman spectra of the samples also show the characteristic bands of 3C-and 6H-SiC at 788 and 965 cm-1. But the bands at 1 345 and 1 590 cm-1 are characteristic peaks of amorphous carbon materials. The intensities of peaks at 788 and 965 cm-1 increase with B content in Raman spectra,which also shift to higher wavenumber with the increasing B. The microstructure of SiC powder is composed of agglomerated particles with diameters ranging from 30 to 100 nm. The results of dielectric property show that the sample with 0.005 B has the largest values in ε′ and ε″ among the four samples due to the existence of the intrinsic defects. But the absence of the relaxation polarization leads to low values of all the samples.
李智敏罗发苏晓磊朱冬梅周万城
关键词:碳化硅粉末微波介电性能硼掺杂
SIC/AL_2O_3复相纳米粉体的制备及其微波介电性能的研究被引量:1
2006年
以溶胶-凝胶、碳热还原法制备了SiC/Al2O3纳米复相粉体,研究了处理温度对粉体相组成的影响及其在8.2~12.4GHz频率范围的介电性能。凝胶先驱体经1700℃处理可得到SiC/Al2O3复相粉体,粉体为300~400nm的球形颗粒,由晶粒尺寸约为45ilm的SiC和Al2O3纳米微晶组成;研究结果表明:Al原子未能固溶于SiC晶格中,导致随着粉体中Al含量的增加,复相粉体中Al2O3的量增加,粉体的复介电常数和介电损耗角正切降低。
刘晓魁周万城罗发朱东梅
关键词:碳热还原微波介电性能
纳米Si/C/N复相粉体-硅溶胶涂层的介电和吸波性能研究被引量:7
2010年
以硅溶胶为粘结剂,氧化铝为主要填料,纳米Si/C/N复相粉体为吸收剂,制备了一系列不同吸收剂含量的耐高温吸波涂层。结果表明,当氧化铝和硅溶胶的质量分数分别为64.7%和32.3%时,涂层具有很好的耐高温性能。随着纳米Si/C/N复相粉体含量的增加,试样的复介电常数显著提高,尤其是复介电常数的虚部;且随着频率的增大,复介电常数的实部有明显的减小趋势,呈频散效应。当纳米Si/C/N复相粉体的含量为2.92%(质量分数,下同),涂层厚度为1.6mm、1.7mm、1.8mm时,最高吸收峰随着厚度的增加向低频移动,反射率均小于-4dB。
耿健烽周万城张颖娟罗发朱冬梅
关键词:吸波涂层介电性能
Preparation and properties of borate glass coatings on Ti-based alloy substrates被引量:1
2007年
A series of BaO-La2O3-B2O3(BLB) glass coats on the Ti-based alloy substrates were developed at different temperatures for different times. The BLB glasses were analyzed by differential thermal analysis(DTA) and thermal mechanical analysis(TMA) to determine the crystallization temperature and coefficients of thermal expansion(CETs) of the glass. The tensile strength and microstructure of the glass coats were analyzed and the effects of the coating condition on the tensile strength and microstructure were discussed. The results show that the CETs of the borate glass at different temperatures match with those of Ti-based alloy,and the difference between the borate glass and Ti-based alloy at each temperature is below 5%. The spreading area in N2 atmosphere is much larger than that in air atmosphere,indicating that N2 atmosphere is helpful for the wetting of borate glass to Ti-based alloy. The tensile strength of the glass coats can reach as high as 28.42 MPa,meeting the requirements for the coat binder. With the increase of coating time,the tensile strength of coats increases firstly while then decreases. The coat prepared at 730 ℃ for 30 min is fairly smooth and complete,while the other coats contain lots of defects such as large or small uncoated region. It is believed that the coating temperature of 730 ℃ and coating time of 30 min are the proper coating conditions to prepare BLB glass coats.
朱冬梅娄霞罗发熊良明周万城
关键词:钛合金氧化钡氧化镧氧化硼
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