您的位置: 专家智库 > >

国家高技术研究发展计划(2011AA010301)

作品数:6 被引量:10H指数:1
相关作者:管小伟吴昊戴道锌徐建王志功更多>>
相关机构:浙江大学东南大学南京泰通科技有限公司更多>>
发文基金:国家高技术研究发展计划国家自然科学基金国家教育部博士点基金更多>>
相关领域:电子电信更多>>

文献类型

  • 6篇期刊文章
  • 1篇会议论文

领域

  • 7篇电子电信

主题

  • 2篇放大器
  • 1篇等离子体
  • 1篇低噪
  • 1篇低噪声
  • 1篇增益
  • 1篇增益控制
  • 1篇直放站
  • 1篇自动增益
  • 1篇自动增益控制
  • 1篇限幅
  • 1篇限幅放大器
  • 1篇纳米
  • 1篇纳米线
  • 1篇接收机
  • 1篇跨阻放大器
  • 1篇激光
  • 1篇激光驱动
  • 1篇激光驱动器
  • 1篇光接收
  • 1篇光接收机

机构

  • 2篇东南大学
  • 1篇浙江大学
  • 1篇南京泰通科技...

作者

  • 1篇曾贤文
  • 1篇于金鑫
  • 1篇戴道锌
  • 1篇王志功
  • 1篇陈莹梅
  • 1篇徐建
  • 1篇吴昊
  • 1篇管小伟

传媒

  • 2篇High T...
  • 1篇Journa...
  • 1篇高技术通讯
  • 1篇The Jo...
  • 1篇中国光学
  • 1篇全国第17次...

年份

  • 2篇2015
  • 4篇2014
  • 1篇2012
6 条 记 录,以下是 1-7
排序方式:
A high linearity current mode second IF CMOS mixer for a DRM/DAB receiver
2015年
A passive current switch mixer was designed for the second IF down-conversion in a DRM/DAB re- ceiver. The circuit consists of an input transconductance stage, a passive current switching stage, and a current amplifier stage. The input transconductance stage employs a self-biasing current reusing technique, with a resistor shunt feedback to increase the gain and output impedance. A dynamic bias technique is used in the switching stage to ensure the stability of the overdrive voltage versus the PVT variations. A current shunt feedback is introduced to the conventional low-voltage second-generation fully balanced multi-output current converter (FBMOCCII), which provides very low input impedance and high output impedance. With the circuit working in current mode, the linearity is effectively improved with low supply voltages. Especially, the transimpedance stage can be re- moved, which simplifies the design considerably. The design is verified with a SMIC 0.18μm RF CMOS process. The measurement results show that the voltage conversation gain is 1.407 dB, the NF is 16.22 dB, and the IIP3 is 4.5 dBm, respectively. The current consumption is 9.30 mA with a supply voltage of 1.8 W. This exhibits a good compromise among the gain, noise, and linearity for the second IF mixer in DRM/DAB receivers.
徐建周正吴毅强王志功陈建平
关键词:DRMDAB
硅基混合表面等离子体纳米光波导及集成器件被引量:9
2014年
总结并展望了硅基混合表面等离子体纳米光波导及集成器件方面的理论和实验研究工作。首先介绍了几种硅基混合表面等离子体纳米光波导结构,其尺寸可小至100 nm以下,而传播长度达100μm量级;其次介绍了基于硅基混合表面等离子体纳米光波导的功分器、偏振分束器和谐振器等集成器件,其尺寸为亚微米量级;最后探讨了硅基混合表面等离子体纳米光波导与硅纳米线光波导的耦合及对其进行增益补偿。
管小伟吴昊戴道锌
关键词:表面等离子体硅纳米线
Design of 15 Gb/s inductorless limiting amplifier with RSSI and LOS indication in 65nm CMOS
2014年
A limiting amplifier IC implemented in 65nm CMOS technology and intended for high-speed op- tical fiber communications is described in this paper. The inductorless limiting amplifier incorporates 5-stage 8 dB gain limiting cells with active feedback and negative Miller capacitance, a high speed output buffer with novel third order active feedback, and a high speed full-wave rectifier. The re- ceiver signal strength indictor (RSSI) can detect input signal power with 33dB dynamic range, and the limiting amplifier features a programmable loss of signal (LOS) indication with external resistor. The sensitivity of the limiting amplifier is 5.5mV at BER = 10^ -12 and the layout area is only 0.53 × 0.72 mm^2 because of no passive inductor. The total gain is over 41dB, and bandwidth exceeds 12GHz with 56mW power dissipation.
陈莹梅Xu ZhigangWang TaoZhang Li
GSM-R光纤直放站低噪声放大器模块的设计被引量:1
2014年
对满足铁路专用数字移动通信系统(GSM-R)标准的光纤直放站低噪声放大器模块进行了设计、制造和测试。放大器模块由四级放大电路构成,可提供高的增益和线性度。输入级采用双平衡放大结构,不仅能改善放大器级间匹配性,而且由于具有冗余备份功能,可提高模块的可靠性。采用数模混合自动增益控制技术保证低噪声放大器的输出功率稳定和高动态范围。测试结果表明,该模块最大增益达到60dB,增益调节范围大于30dB,互调衰减小于-60dBc,噪声系数小于1.0dB,体现了优异的线性度和噪声性能。该模块完全达到GSM-R高铁直放站的设计要求,目前已通过南京泰通科技的实际应用测试,并开始试应用于铁路系统中。
徐建于金鑫曾贤文王志功陈建平吉荣新
关键词:GSM-R光纤直放站
40Gb/s激光驱动器与光接收机前端放大器芯片设计
给出了一种采用IBM 0.13μm BiCMOS工艺实现的用于40Gb/s激光驱动器和光接收机前端放大器芯片设计。其中激光驱动器电路主要由输入缓冲级、预放大级和输出级电路组成,预防大级电路采用串联电阻负反馈结构,输出级电...
陈莹梅张玉楠王鹏霞
关键词:激光驱动器光接收机跨阻放大器限幅放大器
文献传递
Design of 10 GHz eight-phase voltage controlled oscillator in 90nm CMOS
2012年
A novel 10 GHz eight-phase voltage-controlled oscillator (VCO) architecture applied in clock and data recovery (CDR) circuit for 40 Gbit/s optical communications system is proposed. Compared with the traditional eight-phase oscillator, a new ring CL ladder filter structure with four inductors is proposed. The VCO is designed and fabricated in IBM 90 nm complementary metal-oxide-semiconductor transistor (CMOS) technology. Measurement results show the tuning range is 9.2 GHz-11.0 GHz and the phase noise of - 108.85 dBc/Hz at 1 MHz offset from the carrier frequency of 10 GHz. The chip area of VCO is 500 μm × 685 μm and the power dissipation is 17.4 mW with the 1.2 V supply voltage.
CHEN Ying-meiWANG HuiYAN Shuang-chaoZHANG LiLI Wei
关键词:VCO
Verilog HDL modeling and design of 10Gb/s SerDes full rate CDR in 65nm CMOS
2014年
Phase locked loop(PLL) is a typical analog-digital mixed signal circuit and a method of conducting a top level system verification including PLL with standard digital simulator becomes especially significant.The behavioral level model(BLM) of the PLL in Verilog-HDL for pure digital simulator is innovated in this paper,and the design of PLL based clock and data recovery(CDR)circuit aided with jitter attenuation PLL for SerDes application is also presented.The CDR employs a dual-loop architecture where a frequency-locked loop acts as an acquisition aid to the phase-locked loop.To simultaneously meet jitter tolerance and jitter transfer specifications defined in G.8251 of optical transport network(ITU-T OTN),an additional jitter attenuation PLL is used.Simulation results show that the peak-to-peak jitter of the recovered clock and data is 5.17 ps and 2.3ps respectively.The core of the whole chip consumes 72 mA current from a 1.0V supply.
陈莹梅Chen XuehuiYi LvfanWen Guanguo
关键词:VERILOG-HDL
共1页<1>
聚类工具0