H5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI） wafers.Photoluminescence（PL） measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation.
A 10-channel,200 GHz channel spacing InP arrayed waveguide grating was designed,and the deep ridge waveguide design makes it polarization independent.Under the technologies of molecular beam epitaxy, lithography,and induced coupler plasma etching,the chip was fabricated in our laboratory.The test results show that the insertion loss is about -8 dB,and the crosstalk is less than -17 dB.
A monolithic integrated variable attenuator multiplexer/demultiplexer is demonstrated. It is composed of a 16-channel 200 GHz silica-based arrayed waveguide grating and an array of Mach–Zehnder interferometer thermo-optic variable optical attenuators. The integrated device is fabricated on a quartz substrate, which eliminates the process of depositing the undercladding layer and reduces the power consumption compared with a device fabricated on a silicon substrate. The insertion loss and crosstalk of the integrated device are 5 d B and less than 22 d B, respectively. The power consumption is only 110 m W at the attenuation of 20 d B per channel.
