On the silicon-on-insulator platform, an ultra compact temperature-insensitive modulator based on a cascaded microring assistant Mach-Zehnder interferometer is proposed and demonstrated with numerical simulation. According to the calculated results, the tolerated variation of ambient temperature can be as high as 134 ℃ while the footprint of such a silicon modulator is only 340 μm2.
We numerically investigate the electromagnetic properties of tellurium dielectric resonator metamaterial at the infrared wavelengths. The transmission spectra, effective permittivity and permeability of the periodic tellurium metamaterial structure are investigated in detail. The linewidth of the structure in the direction of magnetic field W x has effects on the position and strength of the electric resonance and magnetic resonance modes. With appropriately optimizing the geometric dimensions of the designed structure, the proposed tellurium metamaterial structure can provide electric resonance mode and high order magnetic resonance mode in the same frequency band. This would be helpful to analyze and design low-loss negative refraction index metamaterials at the infrared wavelengths.
An ultra-compact variable optical attenuator based on slow light photonic crystal waveguide with thermo- optic effect is demonstrated. Along with power consumption of as low as 30.7 roW, a variable attenuation range of 10 dB is experimentally achieved by shifting the transmission spectrum at about 4.6 nm. The length of the ProPosed device is only 20 μm.
A subwavelength plasmonic indented waveguide with an active InGaAsP core is proposed.The characteristics of the gap plasmon mode and gain required for lossless propagation are investigated and analyzed by the finite element method.We numerically calculate the normalized mode areas and percentages of energy confined in InGaAsP and metal for plasmonic nanolaser applications.It is shown that the indentation of the sidewalls has an optimal value for which the lasing threshold gain is minimal.The structure could enable low-threshold subwavelength lasing and applications for optoelectronic integrated circuits.
This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistancearea product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 ×10^15 cm-3 in the active region is believed to have the best overall performances.
An optical fiber sensor for ultrathin layer sensing based o51 short-range surface plasmon polariton （SRSPP） is proposed, and the sensing characteristics are theoretically analyzed. Simulation results indicate that even for a detecting layer much thinner than the vacuum wavelength, a resolution as high as 3.7×10-6 RIU can be obtained. Moreover, an average ttfickness-detection sensitivity of 6.2 dB/nm is obtained, which enables the sensor to detect the thickness variation of the ultrathin layer up to tens of nanometers. The sensitive region of thickness could be adjusted by tuning the structure parameters.
Surface-plasmon （SP） enhancement of amorphous-silicon-nitride （a-SiNx） light emission with single-layer gold （Au） waveguides is experimentally demonstrated through time-resolved photoluminescence measure- ment. The a-SiN~ active layer with strong steady-state photoluminescence at 560 nm is prepared by plasma-enhanced chemical vapor deposition, and ricated by magnetron sputtering. The maximum the Au waveguide on the top of the a-SiNx layer is lab- Purcell factor value of -3 is achieved with identified SP resonance of the Au waveguide at -530 nm.
