A1Sb/InAs quantum well （QW） structures and InAs films on GaAs （001） substrates were grown by molecular beam epitaxy （MBE）. We investigated the dependence of electron mobility and two-dimensional electron gas （2DEG） concen- tration on the thickness of an InAs Channel. It is found that electron mobility as high as 19050 cm2 · V-1 · s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the A1Sb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.
