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国家重点基础研究发展计划(2011CBA00100)

作品数:6 被引量:5H指数:2
相关作者:吴培亨康琳闻海虎丁夏欣顾鹏更多>>
相关机构:南京大学更多>>
发文基金:国家重点基础研究发展计划国家自然科学基金国家高技术研究发展计划更多>>
相关领域:理学一般工业技术电子电信更多>>

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Superconductivity in Sm-doped CaFe2As2 single crystals
2016年
In this article,the Sm-doping single crystals Ca_(1-x)Sm_xFe_2As_2(x = 0 ~0.2) were prepared by the Ca As flux method,and followed by a rapid quenching treatment after the high temperature growth.The samples were characterized by structural,resistive,and magnetic measurements.The successful Sm-substitution was revealed by the reduction of the lattice parameter c,due to the smaller ionic radius of Sm^(3+)than Ca^(2+).Superconductivity was observed in all samples with onset T_c varying from 27 K to 44 K upon Sm-doping.The coexistence of a collapsed phase transition and the superconducting transition was found for the lower Sm-doping samples.Zero resistivity and substantial superconducting volume fraction only happen in higher Sm-doping crystals with the nominal x > 0.10.The doping dependences of the c-axis length and onset T_c were summarized.The high-T_c observed in these quenched crystals may be attributed to simultaneous tuning of electron carriers doping and strain effect caused by lattice reduction of Sm-substitution.
陈东云阮彬彬于佳郭琦王小川穆青隔潘伯津刘通陈根富任治安
关键词:掺杂晶体超导电性淬火温度磁场测量
铁基材料KxFe2-ySe2中一种可能的超导基态相K2Fe7Se8的发现被引量:1
2013年
铁基超导体的发现开启了探索超导材料的新一轮热潮。最新发现的铁基超导体KxFe2-ySe2有着许多不同寻常的性质。此材料中明显存在相分离,材料中主要的部分是具有反铁磁性质的绝缘相K2Fe4Se5,超导相只占少量体积。但是超导相在物理上很重要,因为根据理论计算,该材料中不存在空穴型费米面,这样该领域中被广泛接受的S±配对图像似乎受到挑战。相分离的存在致使此材料中相关研究的难度非常大。该文介绍了此材料中超导相的探索和研究,确认了此材料的超导相是以三维网络状的细丝形态存在,并提出超导的母体相可能是每8个Fe位置有一个Fe空位形成的8×10这种有序平行四边形结构,称为K2Fe7Se8相。
丁夏欣闻海虎
关键词:高温超导体
Discovery of a novel 112-type iron-pnictide and La-doping induced superconductivity in Eu_(1-x)La_xFeAs_2(x=0–0.15)被引量:3
2017年
We report the discovery and characterization of a novel 112-type iron pnictide Eu Fe As_2, with La-doping induced superconductivity in a series of Eu_(1-x)La_xFeAs_2. The polycrystalline samples were synthesized through solid state reaction method only within a very narrow temperature window around 1073 K.Small single crystals were also grown from a flux method with the size about 100 lm. The crystal structure was identified by single crystal X-ray diffraction analysis as a monoclinic structure with space group of P21/m. From resistivity and magnetic susceptibility measurements, we found that the parent compound Eu Fe As_2 shows distinct anomalies probably due to the Fe^(2+) related antiferromagnetic/structural phase transition near 110 K and the Eu^(2+) related antiferromagnetic phase transition near 40 K.La-doping suppressed both phase transitions to lower temperatures and induced superconducting transitions with a Tc^11 K for Eu_(0.85)La_(0.15) Fe As_2.
Jia YuTong LiuBo-Jin PanBin-Bin RuanXiao-Chuan WangQing-Ge MuKang ZhaoGen-Fu ChenZhi-An Ren
关键词:LA掺杂超导转变单晶X射线衍射分析
Superconductivity at 7.8 K in the ternary LaRu2As2 compound被引量:2
2016年
Here we report the discovery of superconductivity in the ternary LaRu_2As_2 compound. The polycrystalline LaRu_2As_2 samples were synthesized by the conventional solid state reaction method. Powder X-ray diffraction analysis indicates that LaRu_2As_2 crystallizes in the Th Cr_2Si_2-type crystal structure with the space group I4/mmm(No. 139), and the refined lattice parameters are a = 4.182(6)  and c = 10.590(3) . The temperature dependent resistivity measurement shows a clear superconducting transition with the onset T_c(critical temperature) at 7.8 K, and zero resistivity happens at 6.8 K. The upper critical field at zero temperature μ_0H_(c2)(0) was estimated to be 1.6 T from the resistivity measurement. DC magnetic susceptibility measurement shows a bulk superconducting Meissner transition at 7.0 K, and the isothermal magnetization measurement indicates that LaRu_2As_2 is a type-II superconductor.
Qi GuoBo-Jin PanJia YuBin-Bin RuanDong-Yun ChenXiao-Chuan WangQing-Ge MuGen-Fu ChenZhi-An Ren
关键词:超导电性电阻率测量X射线衍射分析固相反应法
Nb5 N6 microbolometer太赫兹检测器
2014年
随着太赫兹科学技术的快速发展,太赫兹检测器件的性能也在不断提高,为微弱信号的检测和太赫兹成像奠定了坚实的基础.本文针对Nb5N6薄膜材料,研制了Nb5N6microbolometer阵列芯片及其基于这种芯片的太赫兹准光型接收机.单个Nb5N6 microbolometer的直流电压响应最高达760V/W,对应的直流噪声等效功率(NEP)为1.3×10-11 W/√Hz.在实际系统中,由串联结构的Nb5N6 microbolometer构成的准光接收机,光学电压响应率高达428V/W,对应的光学噪声等效功率(NEP)为2.3×10-11 W/√Hz.Nb5N6 microbolometer太赫兹检测器室温工作、工艺简单、检测灵敏度高,响应时间快,便于集成超大规模阵列,为太赫兹信号检测提供了一种有效的途径.
涂学凑毛庆凯徐磊孙振龙康琳金飚兵陈健吴培亨
关键词:太赫兹成像
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