Nanostructured materials have drawn considerable attention because they are promising candidates for nextgeneration electronic and photonic devices with low power consumption[1-5]. A number of methods, such as laser ablation[6], template-induced growth[7], arc discharge [8], vapor transport [9], and molecular-beam epitaxy[10] have been developed to synthesize Si, Ge, MgO,SnO2, GaN, and Ga2O3 nanowires or nanorods[11-15].……
LiuY.K. DongY. WangG.H.(National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
Nanostructured materials have drawn considerable attention because they are promising candidates fo rnextgeneration electronic and photonic devices with low power consumption, A number of methods, suchas laser ablation, template-induced growth, arc dis-charge, vapor transport, and molecular-beam epi-taxy, have been developed to synthesize Si, Ge, MgO,
