In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes（LEDs） with Aldoped ZnO（AZO） transparent conductive layers（TCLs） has been demonstrated.The AZO-TCLs were fabricated on the n-＋-InGaN contact layer by metal organic chemical vapor deposition（MOCVD） using H2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency（98%）,low resistivity（510 -4 Ω·cm）,and an epitaxial-like excellent interface on p-GaN with an n＋-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL（LED-Ⅲ）,and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer（LED-Ⅱ）,respectively.The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.
