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国家重点基础研究发展计划(2013CBA01600)

作品数:19 被引量:42H指数:4
相关作者:高鸿钧王业亮黄立杜世萱刘中流更多>>
相关机构:中国科学院中国科学院大学湖南大学更多>>
发文基金:国家自然科学基金国家重点基础研究发展计划中国博士后科学基金更多>>
相关领域:理学一般工业技术电子电信航空宇航科学技术更多>>

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19 条 记 录,以下是 1-10
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Discovery of Majorana Bound State in Fe-based Superconductor被引量:7
2018年
In 1937, Italian theoretical physicist Ettore Majorana published a paper, in which he made a brilliant discovery by decomposing Dirac equation into the real and imaginary parts. That is the famous equation describing the motion of a Majorana fermion whose antiparticle is itself.
WANG DongfeiKONG LingyuanFAN PenGAO HongjunDING HongGenda GuLiang Fu
关键词:DISCOVERYMAJORANAFE-BASEDSUPERCONDUCTORIOP
Hidden spin polarization in the 1T-phase layered transition-metal dichalcogenides MX_2(M = Zr, Hf; X = S, Se, Te)被引量:5
2018年
The recent discovery of hidden spin polarization emerging in layered materials of specific nonmagnetic crystal is a fascinating phenomenon, though hardly explored yet. Here, we have studied hidden spin tex- tures in layered nonmagnetic 1 T-phase transition-metal dichalcogenides MX2 (M = Zr, Hf; X = S, Se, Te) by using first-principles calculations. Spin-layer locking effect, namely, energy-degenerate opposite spins spatially separated in the top and bottom layer respectively, has been identified. In particular, the hidden spin polarization of 13-band can be easily probed, which is strongly affected by the strength of spin-orbit coupling. The hidden spin polarization of k-band locating at high symmetry M point (conduction band minimum) has a strong anisotropy. In the bilayer, the hidden spin polarization is preserved at the upmost Se layer, while being suppressed if the ZrSe2 layer is taken as the symmetry partner. Our results on hidden spin polarization in 1 T-phase dichalcogenides, verifiable by spin-resolved and angle-resolved photoemis- sion spectroscopy (ARPES), enrich our understanding of spin physics and provide important clues to search for specific spin polarization in two dimensional materials for spintronic and quantum informa- tion applications.
Cai ChengJia-Tao SunXiang-Rong ChenSheng Meng
An isoindigo-bithiazole-based acceptor-acceptor copolymer for balanced ambipolar organic thin-film transistors被引量:2
2016年
Balanced carrier transport is observed in acceptor-acceptor (A-A') type polymer for ambipolar organic thin-film transistors (OTFTs). It is found that the incorporation of two electron-accepting moieties (BTz and IIG) into a polymer main chain to form A-A' polymer PIIG-BTz could lower highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels and facilitate good molecular stacking of the polymer. Ambipolar transistor behaviour for PIIG-BTz, with the balanced hole and electron mobilities of 0.030 and 0.022 cm2 V 1 s-i was observed in OTFT devices, respectively. The study in this work reveals that the utilization of acceptor-acceptor (A-A') structure in polymer main chain can be a feasible strategy to develop ambipolar polymer semiconductors.
Ping LiHanlin WangLanchao MaLong XuFei XiaoZhengran YiYunqi LiuShuai Wang
Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates
2013年
Intercalations of metals and silicon between epitaxial graphene and its substrates are reviewed. For metal intercala- tion, seven different metals have been successfully intercalated at the interface of graphene/Ru(O001) and form different intercalated structures. Meanwhile, graphene maintains its original high quality after the intercalation and shows features of weakened interaction with the substrate. For silicon intercalation, two systems, graphene on Ru(O001) and on Ir(l I 1), have been investigated. In both cases, graphene preserves its high quality and regains its original superlative properties after the silicon intercalation. More importantly, we demonstrate that thicker silicon layers can be intercalated at the interface, which allows the atomic control of the distance between graphene and the metal substrates. These results show the great potential of the intercalation method as a non-damaging approach to decouple epitaxial graphene from its substrates and even form a dielectric layer for future electronic applications.
黄立徐文焱阙炎德毛金海孟蕾潘理达李更王业亮杜世萱刘云圻高鸿钧
关键词:GRAPHENE
Tuning the morphology of chevron-type graphene nanoribbons by choice of annealing temperature被引量:1
2018年
Yun CaoJing QiYan-Fang ZhangLi HuangQi ZhengXiao LinZhihai ChengYu-Yang ZhangXinliang FengShixuan DuSokrates T.PantelidesHong-Jun Gao
Band engineering of double-wall Mo-based hybrid nanotubes
2018年
Hybrid transition-metal dichalcogenides (TMDs) with different chalcogens on each side (X-TM-Y) have attracted attention because of their unique properties. Nanotubes based on hybrid TMD materials have advantages in flexibility over conventional TMD nanotubes. Here we predict the wide band gap tunability of hybrid TMD double-wall nanotubes (DWNTs) from metal to semiconductor. Using density-function theory (DFT) with HSE06 hybrid functional, we find that the electronic property of X-Mo-Y DWNTs (X = O and S, inside a tube; Y = S and Se, outside a tube) depends both on electronegativity difference and diameter difference. If there is no difference in electron negativity between inner atoms (X) of outer tube and outer atoms (Y) of inner tube, the band gap of DWNTs is the same as that of the inner one. If there is a significant electronegativity difference, the electronic property of the DWNTs ranges from metallic to semiconducting, depending on the diameter differences. Our results provide alternative ways for the band gap engineering of TMD nanotubes.
Lei TaoYu-Yang ZhangJiatao SunShixuan DuHong-Jun Gao
关键词:NANOTUBE
类石墨烯锗烯研究进展被引量:10
2017年
近年来,伴随石墨烯研究的深入开展,考虑到兼容半导体工业,构筑类石墨烯锗烯并探究其奇特电学性质已成为凝聚态物理领域的研究前沿.本文首先简要介绍了锗烯这一全新二维体系的理论研究进展,包括锗烯的几何结构、电子结构及其调控以及它们之间的关系.理论研究表明,因最近邻原子间距大,锗烯比硅烯更难构筑,实验上构筑锗烯颇具挑战性.针对这一问题,介绍了实验上制备锗烯的一些进展,重点介绍了金属表面外延制备锗烯,并对本征锗烯的制备及其在未来纳电子学器件的潜在应用做出了展望.
秦志辉
关键词:锗烯石墨烯电子结构扫描隧道显微术
金属衬底上高质量大面积石墨烯的插层及其机制
2017年
石墨烯作为一种新型二维材料,因其优异的性质,在科学和应用领域具有非常重要的意义.而其超高的载流子迁移率、室温量子霍尔效应等,使其在信息器件领域备受关注.如何获得高质量并且与当代硅基工艺兼容的石墨烯功能器件,是未来将石墨烯应用于电子学领域的关键.近年来,研究人员发展了一种在外延石墨烯和金属衬底之间实现硅插层的技术,将金属表面外延石墨烯高质量、大面积的特点与当代硅基工艺结合起来,实现了无需转移且无损地将高质量石墨烯置于半导体之上.通过系统的实验研究并结合理论计算,揭示了插层过程包含四个主要阶段:诱导产生缺陷、异质原子插层、石墨烯自我修复和异质原子扩散成膜,并证实了这一插层机制的普适性.拉曼和角分辨光电子能谱实验结果表明,插层后的石墨烯恢复了本征特性,接近自由状态.此外,还实现了多种单质元素的插层.不同种类的原子形成不同的插层结构,从而构成了多种石墨烯/插层异质结.这为调控石墨烯的性质提供了实验基础,也展现了该插层技术的普适性.
郭辉路红亮黄立王雪艳林晓王业亮杜世萱高鸿钧
关键词:石墨烯插层技术扫描隧道显微镜
Electronic properties of silicene in BN/silicene van der Waals heterostructures
2018年
Silicene is a promising 2D Dirac material as a building block for van der Waals heterostructures (vdWHs). Here we investigate the electronic properties of hexagonal boron nitride/silicene (BN/Si) vdWHs using first-principles calculations. We calculate the energy band structures of BN/Si/BN heterostructures with different rotation angles and find that the electronic properties of silicene are retained and protected robustly by the BN layers. In BN/Si/BN/Si/BN heterostructure, we find that the band structure near the Fermi energy is sensitive to the stacking configurations of the silicene layers due to in- terlayer coupling. The coupling is reduced by increasing the number of BN layers between the silicene layers and becomes negligible in BN/Si/(BN)3/Si/BN. In (BN)n/Si superlattices, the band structure undergoes a conversion from Dirac lines to Dirac points by increasing the number of BN layers between the silicene layers. Calculations of silicene sandwiched by other 2D materials reveal that silicene sandwiched by low-carbon-doped boron nitride or HfO2 is semiconducting.
Ze-Bin WuYu-Yang ZhangGeng LiShixuan DuHong-Jun Gao
关键词:SILICENEBNHETEROSTRUCTURE
Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices被引量:2
2018年
Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carder densities or in the ON state, tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carder densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ~ 67.3 meV can be extracted from the thermal emission-diffusion theory.
Guo-Cai WangLiang-Mei WuJia-Hao YanZhang ZhouRui-Song MaHai-Fang YangJun-Jie LiChang-Zhi GuLi-Hong BaoShi-Xuan DuHong-Jun Gao
关键词:HETEROJUNCTION
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