模具表面改性日益受到人们重视。本文采用二维Particle-in-cell/Monte Carlo Collision模型对等离子体浸没离子注入处理凹模型腔内表面的鞘层动力学及均匀性进行了研究。考察了电压脉宽对鞘层中电势分布、离子的运动状态以及型腔内表面离子注入剂量、能量和角度的空间分布的影响。结果表明随着电压脉宽的增加,凹模型腔内表面的注入剂量不均匀性增加,同时注入到内表面的高能离子数目也增加。脉冲宽度变化对注入角度影响不大,离子以接近垂直的入射角度注入到型腔底部,而在侧壁上离子注入角度接近45°。当脉冲宽度较大时,发现少部分注入到侧壁上的离子以一定角度从下往上注入到样品表面,这是由于碰撞效应造成的。从能量和剂量的角度,存在一个合适的脉冲宽度,过大的脉宽会引起剂量不均匀性增加,同时离子注入能量也会下降。
TiN/TiAlN multilayer coatings were prepared by arc ion plating with separate targets. In order to decrease the unfavorable macroparticles, a straight magnetized filter was used for the low melting aluminium target. The results show that the output plasmas of titanium target without filter and aluminium target with filter reach the substrate with the same order of magnitude. Meanwhile, the number of macropartieles in TiN/TiAlN multilayer coatings deposited with separate targets is only 1/10-1/3 of that deposited with alloy target reported in literature. Al atom addition may lead to the decrease of peak at （200） lattice plane and strengthening of peak at （111） and （220） lattice planes. The measured hardness of TiN/TiAlN multilayer coatings accords with the mixture principle and the maximum hardness is HV2495. The adhesion strength reaches 75 N.
Plasma surface modification of the inner wall of a slender tube is quite difficult to achieve using conventional means. In the work described here, an inner coaxial radio frequency （RF） copper electrode is utilized to produce the plasma and also acts as the sputtered target to deposit copper films in a tube. The influence of RF power, gas pressure, and bias voltage on the distribution of plasma density and the uniformity of film thickness is investigated. The experimental results show that the plasma density is higher at the two ends and lower in the middle of the tube. A higher RF power and pressure as well as larger tube bias lead to a higher plasma density. Changes in the discharge parameter only affect the plasma density uniformity slightly. The variation in the film thickness is consistent with that of the plasma density along the tube axis for different RF power and pressure. Although the plasma density increases with higher tube biases, there is an optimal bias to obtain the highest deposition rate. It can be attributed to the reduction in self-sputtering of the copper electrode and re-sputtering effects of the deposited film at higher tube biases.
