您的位置: 专家智库 > >

国家自然科学基金(60971020)

作品数:9 被引量:7H指数:2
相关作者:乔英杰姜国光段成丽王大兴王震更多>>
相关机构:哈尔滨工程大学中国电子科技集团公司第四十九研究所中国国防科技信息中心更多>>
发文基金:国家自然科学基金国家高技术研究发展计划更多>>
相关领域:自动化与计算机技术理学一般工业技术金属学及工艺更多>>

文献类型

  • 8篇中文期刊文章

领域

  • 3篇自动化与计算...
  • 2篇金属学及工艺
  • 2篇一般工业技术
  • 2篇理学
  • 1篇电子电信
  • 1篇电气工程

主题

  • 2篇溅射
  • 2篇感器
  • 2篇ALUMIN...
  • 2篇传感
  • 2篇传感器
  • 2篇磁控
  • 2篇磁控溅射
  • 1篇电阻
  • 1篇电阻器
  • 1篇氧化铝
  • 1篇氧化膜
  • 1篇冗余
  • 1篇冗余设计
  • 1篇陶瓷
  • 1篇陶瓷表面
  • 1篇退火
  • 1篇退火热处理
  • 1篇汽油
  • 1篇热敏电阻
  • 1篇热敏电阻器

机构

  • 4篇哈尔滨工程大...
  • 3篇中国电子科技...
  • 1篇中国国防科技...
  • 1篇中国航天科工...

作者

  • 3篇乔英杰
  • 2篇姜国光
  • 1篇段成丽
  • 1篇于佳音
  • 1篇王震
  • 1篇练小正
  • 1篇范茂军
  • 1篇付洪波
  • 1篇王大兴
  • 1篇汪洋

传媒

  • 3篇传感器与微系...
  • 2篇Journa...
  • 1篇材料热处理学...
  • 1篇Journa...
  • 1篇中国科技论文

年份

  • 3篇2013
  • 4篇2012
  • 1篇2010
9 条 记 录,以下是 1-8
排序方式:
Study on the characterization and technology of Cu thin-film temperature sensor fabricated on aluminum alloy
2012年
In the present study,anodic films on aluminium alloy was used as the dielectric layer for Cu thinfilm temperature sensor,and then Cu film was deposited by unbalanced magnetron sputtering ion plating as the sensitive layer.Microstructure and surface morphologies of Cu film were investigated by optical microscope(OM),atomic force microscope(AFM) and scanning electron microscope(SEM).Electrical properties of Cu thin-film temperature sensor were tested by four-point probe technique and Digit Multimeter.The results showed that the surface roughness of anodic films can be reduced from Ra 58.096 nm to Ra 16.335 nm by proper polishing.Continual Cu stripes can be obtained both on polished anodic alumina film and smooth alumina wafer by etching after Cu film annealing.The resistivity of Cu films before and after 300 ℃ as well as 400 ℃ annealing are 12.48 mΩ·cm,5.48 mΩ·cm and 4.83 mΩ·cm,respectively.The resistances of Cu thin-film temperature sensor in 70 ℃ and 0 ℃ are 946.5 Ω and 761.15 Ω respectively.The temperature coefficient of resistivity(TCR) of the sensor is 3479 × 10^(- 6) /℃.
乔英杰崔新芳刘瑞良练小正
关键词:SENSORANNEALINGMORPHOLOGY
高灵敏度铂薄膜热敏电阻器精细刻蚀技术研究被引量:2
2013年
为了提高铂薄膜热敏电阻器的灵敏度,设计一种标称阻值为5000Ω的超细阻栅结构。通过对高精度干法刻蚀技术研究,解决了传统激光刻蚀和反应离子刻蚀不能加工高质量精细线条的技术问题,实现7μm特征铂电阻条尺寸的加工。测试和分析表明:铂薄膜热敏电阻器在0℃下标称阻值为5 000±1.0Ω,灵敏度为19±0.5Ω/℃,温度系数为(3850±12)×10-6/℃。
姜国光王震张洪泉王大兴
关键词:热敏电阻器刻蚀技术灵敏度标称阻值温度系数
热处理对氧化铝陶瓷表面铜膜性能的影响
2013年
采用射频磁控溅射方法在Al2O3陶瓷基底上淀积厚度为500 nm的Cu膜,并将其于真空热处理炉中采用30℃/min和5℃/min两个升温速率升温至400℃退火处理2 h,研究了退火升温速度对铜膜表面形貌、电阻率及附着力的影响。结果表明:退火热处理使Cu薄膜表面粗糙度增加,铜膜电阻率降低,膜-基结合力增强。且30℃/min快速升温较5℃/min缓慢升温退火热处理,Cu薄膜表面粗糙度低,Cu薄膜表面电阻率低,膜-基结合力差。利用自由电子气理论和扩散理论对退火热处理过程引起的性能变化进行了分析解释。
乔英杰付洪波崔新芳
关键词:磁控溅射CU膜退火热处理微结构
微悬梁式汽油传感器研究
2010年
提出了利用MEMS技术将电化学生长的Al2O3模板加工成传感器的微悬梁结构,并将其用于催化燃烧式气体传感器结构的基底。采用平面薄膜工艺制作出铂薄膜敏感电阻器,涂敷Al2O3-ZrO2-ThO2-Pt—Pd和Al2O3-ZrO2-ThO2-PbO形成催化敏感桥臂和温湿度补偿桥臂,从而制作出汽油传感器。测试结果表明:传感器可实现汽油体积分数为(0-15)×10^-3的检测(标准气为己烷),且具有线性输出特性。同时对汽油传感器的工作初始稳定性和长期稳定性问题进行了研究。
张洪泉乔英杰汪洋范茂军
关键词:催化
Effects of current density on the corrosion behaviour of anodized aluminum alloy in FeCl_3 solution
2012年
In the present study, 2024 aluminum alloy specimen was anodized in acetic acid and oxalic acid e- lectrolytes. Effects of the current density on the microstructure and corrosion resistance of anodic oxide film have been investigated. The steady voltage increases from 11 V to 71 V with the current density increase from 0. 5 A/din2 to 2. 5 A/din2. The SEM reveals that there are pits, cavities and irregular pores in the anodic film, and their size and morphologies change with the current density. The corrosion resistance of the film was evalua- ted by potentiodynamic polarization and electrochemical impedance in 0.1 mol/L FeC13 solution at room temper- ature. The results show that corrosion resistance of the anodic oxide film changes with the current density, and the anodic fihn formed at the current density of 1.0 A/dm2 has the best corrosion resistance. These observations indicate that anodic film formed at J -- 1.0 A/dm2can serve as a support material for the Cu micrometallic pat-
崔新芳乔英杰刘瑞良练小正
Al/Al_2O_3/Cu测控温薄膜材料的制备
2013年
针对液浮陀螺仪悬浮液的应用环境,设计出Al/Al_2O_3/Cu测控温材料。采用阳极氧化的方法在草酸与冰乙酸组成的电解液中制备了阳极氧化膜绝缘层,并采用磁控溅射的方法制备了温度敏感层。利用扫描电镜、原子力显微镜和光学显微镜等研究了阳极氧化膜和铜膜的表面形貌,采用绝缘电阻测试仪测试阳极氧化膜的绝缘性能。结果表明,阳极氧化工艺对阳极氧化膜的绝缘性能以及热处理过程中的开裂行为都有一定影响。电流密度为1.0~1.5 A/dm^2,冰乙酸浓度为0.1~0.3 mol/L,阳极氧化时间在30~60 min条件下制备的氧化膜绝缘性能和抗开裂性能满足Al/Al_2O_3/Cu绝缘层要求。以该氧化膜为衬底制备铜膜刻蚀后可得到连续的电阻条。
于佳音崔新芳练小正乔英杰
关键词:陀螺仪氧化膜磁控溅射
一种基于MEMS技术的冗余Pt温度传感器研究被引量:3
2012年
为了提高Pt温度传感器的响应时间和可靠性水平,设计了一种MEMS冗余结构的新型温度传感器。结构基体采用可微加工0.1 mm厚的γ-Al2O3陶瓷;敏感薄膜由磁控溅射沉积而成,并采用离子束刻蚀方法加工成标准阻值。分析和测试表明:传感器输出与温度变化呈线性关系,空气状态下的90%响应时间小于60 s,在-20~180℃温区内非线性小于0.01%。采用二单元冗余设计的并联工作方式可有效提高传感器的可靠水平。
姜国光段成丽张洪泉
关键词:温度传感器冗余设计
Preparation, Characterizations and Magnetic Properties of Doped Barium Hexaferrites BaFe_(12-2x)Mn_xSn_xO_(19) (x = 0.0-1.0)
2012年
A series of doped barium hexaferrites BaFe12-2xMnxSnxO19 (x = 0.0-1.0) particles were prepared by the co-precipitation/molten salt method. The particle size and crystalline of the samples BaFe12-2xMnxSnxO19 decrease with an increase in the doping amount x. When x is less than 0.8, the pure BaFe12-2xMnxSnxO19 particles with hexagonal plate morphology are obtained. The effects of substitution on magnetic properties were evaluated and compared to nomal BaFe12O19. The specific magnetizations (Ms) of doped materials have been significantly improved. Among all these compositions, the BaFe10.4Mn0.8Sn0.8O19 sample has the highest Ms value of 81.8 A?m2?kg-1 at room temperature and its intrinsic coercivity (Hc) is 44.5 kA?m-1. The as-prepared doped barium ferrites exhibit a low temperature coefficient of coercivity close to zero. The coercivity is independent of temperature when x is in the a range 0.5-0.7.
王敬平夏天
共1页<1>
聚类工具0