N-ion-implantation to a fluence of 1×1015ions/cm2was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400?C–500?C after N-ionimplantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ionimplantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction(XRD), photoluminescence(PL), optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500?C. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500?C.
