您的位置: 专家智库 > >

国家高技术研究发展计划(2002AA312240)

作品数:11 被引量:14H指数:3
相关作者:陈弘达毛陆虹高鹏申荣铉唐君更多>>
相关机构:中国科学院天津大学东南大学更多>>
发文基金:国家高技术研究发展计划国家自然科学基金更多>>
相关领域:电子电信更多>>

文献类型

  • 11篇中文期刊文章

领域

  • 11篇电子电信

主题

  • 4篇CMOS
  • 3篇VCSEL
  • 2篇MODULE...
  • 1篇单片
  • 1篇单片集成
  • 1篇电路
  • 1篇电容
  • 1篇短距离
  • 1篇多模
  • 1篇多模光纤
  • 1篇氧化物半导体
  • 1篇以太
  • 1篇以太网
  • 1篇甚短距离
  • 1篇甚短距离传输
  • 1篇探测器
  • 1篇同步光网络
  • 1篇腔面
  • 1篇万兆以太网
  • 1篇响应度

机构

  • 9篇中国科学院
  • 6篇天津大学
  • 2篇东南大学
  • 1篇北京理工大学

作者

  • 9篇陈弘达
  • 7篇毛陆虹
  • 5篇高鹏
  • 4篇申荣铉
  • 3篇唐君
  • 2篇裴为华
  • 2篇李炜
  • 2篇陈永权
  • 2篇粘华
  • 2篇贾久春
  • 2篇黄家乐
  • 2篇周毅
  • 2篇王志功
  • 2篇贾九春
  • 2篇孙增辉
  • 1篇许兴胜
  • 1篇韩建忠
  • 1篇黄永箴
  • 1篇柯锡明
  • 1篇李智群

传媒

  • 10篇Journa...
  • 1篇高技术通讯

年份

  • 2篇2006
  • 5篇2005
  • 1篇2004
  • 3篇2003
11 条 记 录,以下是 1-10
排序方式:
A Low Noise,1.25Gb/s Front-End Amplifier for Optical Receivers
2006年
This paper presents a low noise, 1.25Gb/s and 124dBΩ front-end amplifier that is designed and fabricated in 0.25μm CMOS technology for optical communication applications. Active inductor shunt peaking technology and noise optimization are used in the design of a trans-impedance amplifier,which overcomes the problem of inadequate bandwidth caused by the large parasitical capacitor of the CMOS photodiode. Experimental results indicate that with a parasitical capacitance of 2pF,this circuit works at 1.25Gb/s. A clear eye diagram is obtained with an input optical signal of - 17dBm. With a power supply of 3.3V, the front-end amplifier consumes 122mW and provides a 660mV differential output.
薛兆丰李智群王志功熊明珍李伟
Bandwidth Design for CMOS Monolithic Photoreceiver
2005年
A monolithic photoreceiver which consists of a double photodiode (DPD) detector and a regulated cascade (RGC) transimpedance amplifier (TIA) is designed.The small signal circuit model of DPD is given and the bandwidth design method of a monolithic photoreceiver is presented.An important factor which limits the bandwidth of DPD detector and the photoreceiver is presented and analyzed in detail.A monolithic photoreceiver with 1.71GHz bandwidth and 49dB transimpedance gain is designed and simulated by applying a low-cost 0.6μm CMOS process and the test result is given.
粘华毛陆虹李炜陈弘达贾久春
关键词:PHOTORECEIVER
Co-Design of Monolithically Integrated Photo-Detector and Optical-Receiver
2004年
A behavioral model of the photodiode is presented.The model describes the relationship between photocurrent and incident optical power,and it also illustrates the impact of the reverse bias to the variation of the junction capacitance.According to this model,the photodiode and a CMOS receiver circuit are simulated and designed simultaneously under a universal circuit simulation environment.
高鹏陈弘达毛陆虹贾九春陈永权孙增辉
关键词:CO-DESIGN
Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS
2006年
A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF (mixed signal, radio frequency) CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.
陈弘达高鹏毛陆虹黄家乐
关键词:OEIC
30Gbit/s并行光发射模块制作过程中的光耦合及封装被引量:1
2005年
介绍了并行光发射模块制作过程中,垂直腔面发射激光器列阵与列阵光纤的对准及固定方法.对斜面光纤折弯耦合和垂直耦合两种方法进行了实验研究,得到的平均耦合效率均达70%以上.比较了两种耦合方式的利弊.针对列阵光纤耦合的特点,介绍了列阵光纤耦合过程中光纤的位置、角度的调整方法和特点.
裴为华唐君申荣铉陈弘达
关键词:垂直腔面发射激光器并行光发射模块
用CMOS工艺实现VSR光电集成接收机的途径被引量:3
2003年
介绍了 1 0Gbit/s速率的甚短距离光传输系统VSR(VeryShortReach)中的接收机。分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。提出用CMOS电路实现VSR光电集成 (OEIC)
毛陆虹韩建忠粘华高鹏李炜陈永权
关键词:CMOS电路甚短距离传输同步光网络多模光纤互补金属氧化物半导体
10Gbit/s并行光收发模块在万兆以太网的应用
2005年
介绍了万兆以太网技术(10 gigabit ethernet technology).万兆以太网使用以太网结构实现10Gbit/s点对点传输,距离可达到40km,使以太网的应用从局域网扩展到城域网和广域网.重点介绍了万兆以太网的功能结构、分层结构、物理传输介质和甚短距离(very short reach)网络传输的并行光传输系统在万兆以太网方面的应用.
周毅陈弘达左超贾久春申荣铉
关键词:ETHERNETXAUIVCSEL
MS/RF CMOS工艺兼容的光电探测器被引量:5
2005年
为实现光纤通信系统中的单片光电集成,采用工业标准工艺设计了硅基光电探测器,讨论了光电探测器的机理,提出了五种新的探测器结构,并采用TSMC0.18μmMS/RFCMOS工艺进行了流片.利用半导体测试仪对芯片进行了测试,包括探测器的暗电流、响应度和结电容,并分析了深n阱、浅沟槽隔离等工艺步骤对探测器参数的影响.结果表明,利用标准MS/RFCMOS工艺实现的光电探测器具有良好的特性.
黄家乐毛陆虹陈弘达高鹏刘金彬雷晓荃
关键词:单片集成CMOS工艺硅光电探测器响应度结电容
High Speed VCSEL-Based Parallel Optical Transmission Modules
2005年
Design and fabrication of a parallel optical transmitter are reported. The optimized 12 channel parallel optical transmitter,with each channel's data rate up to 3Gbit/s,is designed, assembled, and measured. A top-emitting 850nm vertical cavity surface emitting laser(VCSEL) array is adopted as the light source,and the VCSEL chip is directly wire bonded to a 12 channel driver IC. The outputs of the VCSEL array are directly butt coupled into a 12 channel fiber array. Small form factor pluggable (SFP) packaging technology is used in the module to support hot pluggable in application. The performance results of the module are demonstrated. At an operating current of 8mA, an eye diagram at 3Gbit/s is achieved with an optical output of more than 1mW.
陈弘达申荣铉裴为华贾九春唐君周毅许兴胜
关键词:VCSELMODULES
16-Channel 0.35μm CMOS/VCSEL Transmission Modules被引量:4
2003年
The vertical cavity surface emitting laser (VCSEL) arrays and VCSEL-based optical transmission modules are investigated.It includes the VCSEL's spectral characteristic,modulation characteristic,high frequency characteristic,and compatibility with microelectronic circuit.The module consists of 1×16 VCSEL array and 16-channel lasers driver with 0.35μm CMOS circuit by hybrid integration.During the test process,the module operates well at more than 2GHz in -3dB frequency bandwidth.
陈弘达申荣铉毛陆虹唐君梁琨杜云黄永箴吴荣汉冯军柯锡明刘欢艳王志功
关键词:VCSELCMOS
共2页<12>
聚类工具0