Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic （FM） monolayer and an FM/antiferromagnetic （AFM） bilayer under a stress field, respectively. It then investigates the magnetoresistance （MR） of the spin-valve structure, which is built by an FM rnonolayer and an FM/AFM bilayer, and its dependence upon the applied stress field. The results show that under the stress field, the magnetization properties of the FM monolayer is obviously different from that of the FM/AFM bilayer, since the coupled AFM layer can obviously block the magnetization of the FM layer. This phenomenon makes the MR of the spin-valve structure become obvious. In detail, there are two behaviors for the MR of the spin-valve structure dependence upon the stress field distinguished by the coupling （FM coupling or AFM coupling） between the FM layer and the FM/AFM bilayer. Either behavior of the MR of the spin-valve structure depends on the stress field including its value and orientation. Based on these investigations, a perfect mechanical sensor at the nano-scale is suggested to be devised experimentally.
The structure dependence of exchange bias in ferromagnetic/antiferromagnetic （FM/AF） bilayers has been investigated in detail by extending Slonczewski＇s ＇proximity magnetism＇ idea. Here three important parameters are discussed for FM/AF bilayers, i.e. interracial bilinear exchange coupling J1, interracial biquadratic （spin-flop） exchange coupling J2 and antiferromagnetic layer thickness tAF. The results show that both the occurrence and the variety of the exchange bias strongly depend on the above parameters. More importantly, the small spin-flop exchange coupling may result in an exchange bias without the interracial bilinear exchange coupling. However, in general, the spin-flop exchange coupling cannot result in the exchange bias. The corresponding critical parameters in which the exchange bias will occur or approach saturation are also presented.
