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国家高技术研究发展计划(2012AA050701)

作品数:9 被引量:28H指数:2
相关作者:乔在祥刘浩薛玉明冯少君李微更多>>
相关机构:天津理工大学中国电子科技集团公司第十八研究所天津电源研究所更多>>
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9 条 记 录,以下是 1-9
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Research on structural characteristics of large-scale CdS thin films deposited by CBD under low ammonia condition
2015年
Cadmium sulfide(Cd S) buffer layers with the scale of 10 cm×10 cm are deposited by chemical bath deposition(CBD) with different temperatures and thiourea concentrations under low ammonia condition.There are obvious hexagonal phases and cubic phases in Cd S thin films under the conditions of low temperature and high thiourea concentration.The main reason is that the heterogeneous reaction is dominant for homogeneous reaction.At low temperature,Cd S thin films with good uniformity and high transmittance are deposited by adjusting the thiourea concentration,and there is almost no precipitation in reaction solution.In addition,the low temperature is desired in assembly line.The transmittance and the band gap of Cd S thin films are above 80% and about 2.4 e V,respectively.These films are suitable for the buffer layers of large-scale Cu(In,Ga)Se2(CIGS) solar cells.
薛玉明高林尹富红乔在祥刘浩冯少君孙海涛杭伟
Morphology of CIGS thin films deposited by single-stage process and three-stage process at low temperature
2013年
Cu(In,Ga)Se2(CIGS)thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment.The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy(SEM).The orientation of CIGS thin films is identified by X-ray diffraction(XRD)and Raman spectrum,respectively.Through analyzing the film-forming mechanisms of two preparation processes,we consider the cause of such differences is that the films deposited by three-stage process at low temperature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones.The three-stage process at low temperature results in the CIGS thin films with the(220)/(204)preferred orientation,and the ordered vacancy compound(OVC)layer is formed on the surface of the film.This study has great significance to large-scale industrial production.
张嘉伟薛玉明李微赵彦民乔在祥
关键词:CIGS薄膜低温度扫描电子显微镜
Research on structure of Cu2ZnSn(S,Se)4 thin films with high Sn-related phases
2016年
Cu_2ZnSn(S, Se)_4(CZTSSe) thin films were deposited on flexible substrates by three evaporation processes at high temperature. The chemical compositions, microstructures and crystal phases of the CZTSSe thin films were respectively characterized by inductively coupled plasma optical emission spectrometer(ICP-OES), scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman scattering spectrum. The results show that the single-step evaporation method at high temperature yields CZTSSe thin films with nearly pure phase and high Sn-related phases. The elemental ratios of Cu/(Zn+Sn)=1.00 and Zn/Sn=1.03 are close to the characteristics of stoichiometric CZTSSe. There is the smooth and uniform crystalline at the surface and large grain size at the cross section for the films, and no other phases exist in the film by XRD and Raman shift measurement. The films are no more with the Sn-related phase deficiency.
李鹏宇薛玉明刘浩夏丹宋殿友冯少君孙海涛俞兵兵乔在祥
Modification of deposition process for Cu(In, Ga)Se_2 thin film solar cells on polyimide substrate at low temperature被引量:2
2013年
We fabricate polycrystalline Cu(In, Ga)Se2 (CIGS) film solar cells on polyimide (PI) substrate at temperature of 450 °C with single-stage process, and obtain a poor crystallization of CIGS films with several secondary phases in it. For improving it further, the two-stage process is adopted instead of the single-stage one. An extra Cu-rich CIGS layer with the thickness from 100 nm to 200 nm is grown on the substrate, and then another Cu-poor CIGS film with thickness of 1.5-2.0 μm is deposited on it. With the modification of the evaporation process, the grain size of absorber layer is increased, and the additional secondary phases almost disappear. Accordingly, the overall device performance is improved, and the conversion efficiency is enhanced by about 20%.
辛治军陈希明乔在祥王赫薛玉明潘振田园
关键词:薄膜太阳能电池CUGA
大面积ZnO:Al窗口层的制备与研究被引量:2
2013年
采用磁控溅射方法,制备了大面积(300mm×300mm)ZnO:Al薄膜作为CIGS太阳电池的窗口层。设计以电阻率和透过率测试值的标准差乘积作为衡量大面积低阻ZnO窗口层的均匀性标准,确定4mm/s作为衬底与靶材最合适的相对行走速度,并进一步研究工作气压和溅射功率对ZnO:Al薄膜结构、电学特性和光学特性的影响,实现在400~1 200nm波长范围内平均透过率大于85%,电阻率ρ约1.0×10-3Ω.cm。试验结果表明,改善的工艺条件能得到大面积内厚度均匀、光电特性良好的低阻ZnO窗口层。
尹振超朱宁乔在祥
关键词:磁控溅射CIGS薄膜太阳电池
衬底对宽带隙CGS薄膜的影响
2013年
分别在Al∶ZnO(ZAO)薄膜和Mo薄膜两种不同衬底材料上,采用"三步法"共蒸发工艺沉积了约0.8μm厚的CuGaSe2(CGS)薄膜,用X射线衍射仪测量薄膜的织构,研究不同衬底材料对CGS薄膜的影响。在ZAO薄膜底电极上沉积的CGS薄膜的(112)衍射峰强度较Mo薄膜底电极上减弱,(220/204)衍射峰反而增强。
赵彦民肖温李微杨立乔在祥陈贵锋
关键词:宽带隙衬底
铜锌锡硫薄膜材料及其器件应用研究进展被引量:12
2015年
铜锌锡硫薄膜材料组成元素储量丰富,环境友好,成本低廉,成为最具前景的薄膜材料之一.目前,Cu2ZnSn(S,Se)4(CZTSSe)薄膜太阳电池的最高转换效率已经达到12.6%.本文总结了Cu2ZnSnS4(CZTS)的发展历史,依次介绍了CZTS薄膜材料的结构特性、光学特性、电学特性、界面特性和Na对CZTS薄膜的影响,详细介绍了CZTS薄膜的制备方法及器件应用的最新研究进展,总结了目前CZTS薄膜太阳电池发展中存在的问题,展望了今后的研究方向.
刘浩薛玉明乔在祥李微张超尹富红冯少君
薄膜太阳电池技术发展趋势浅析被引量:11
2012年
低成本、高效率的薄膜太阳电池是未来光伏产业发展的重要方向之一。主要介绍了目前备受关注的薄膜太阳电池,包括硅基薄膜太阳电池、铜铟镓硒与铜锌锡硫薄膜太阳电池,及砷化镓薄膜太阳电池等,简述了它们的各自特点、研究现状、主要技术路线和产业化发展等情况。最后展望了薄膜太阳电池未来的发展趋势。
李微黄才勇刘兴江
关键词:硅基薄膜太阳电池铜铟镓硒薄膜太阳电池
衬底温度对CZTSSe薄膜结构特性的影响被引量:1
2017年
采用热蒸发法制备铟锌锡硫(CZTSSe)薄膜。采用低温一步法在300℃衬底温度下制备CZTSSe薄膜;采用两步法,即在衬底温度分别为300℃和480℃制备CZTSSe薄膜;将衬底温度设定为480℃不变,一步蒸发沉积CZTSSe薄膜。通过对X射线衍射(XRD)、扫描电镜(SEM)、拉曼谱对比发现,在300℃低温下一步法和300℃、480℃两步法沉积的薄膜表面粗糙,碎小晶粒较多;在480℃一步高温法制备的薄膜表面平整,晶粒大小均匀,3个衍射峰的半高峰宽变窄,薄膜的结晶质量得到改善,且没有发现其它杂相的拉曼特征峰,沉积出适合作为制备CZTSSe薄膜太阳电池的吸收层。
冯少君薛玉明刘浩宋殿友夏丹孙海涛李鹏宇乔在祥
关键词:衬底温度太阳电池结构特性
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