Photoluminescence （PL） conversion of Si nanoparticles by absorbing ultraviolet （UV） lights and emitting visible ones has been used to improve the efficiency of crystalline Si solar cells. Si nanoparticle thin films are prepared by pulverizing porous Si in ethanol and then mixing the suspension with a SiO2 sol-gel （SOG）. This SOG is spin-deposited onto the surface of the Si solar cells and dries in air. The short-circuit current as a function of Si nanoparticle concentration is investigated under UV illumination. The maximal increase is found at a Si concentration of 0.1 mg/mL. At such concentration and under the irradiation of an AM0 solar simulator, the photoelectric conversion efficiency of the crystalline Si solar cell is relatively increased by 2.16% because of the PL conversion.
We prepare Si x （ZrO 2 ） 100 x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter ana- lyzer, respectively. With the proper Si-doped Si x （ZrO 2） 100 x interlayer, the Al/ Si x （ZrO 2 ） 100 x /Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.
