Pixel image lag in a 4-T CMOS image sensor is analyzed and simulated in a two-dimensional model.Strategies of reducing image lag are discussed from transfer gate channel threshold voltage doping adjustment,PPD N-type doping dose/implant tilt adjustment and transfer gate operation voltage adjustment for signal electron transfer.With the computer analysis tool ISE-TCAD,simulation results show that minimum image lag can be obtained at a pinned photodiode n-type doping dose of 7.0×10^12 cm^-2,an implant tilt of -2°,a transfer gate channel doping dose of 3.0×10^12 cm^-2 and an operation voltage of 3.4 V.The conclusions of this theoretical analysis can be a guideline for pixel design to improve the performance of 4-T CMOS image sensors.
A low reset noise CMOS image sensor （CIS） based on column-level feedback reset is proposed. A feedback loop was formed through an amplifier and a switch. A prototype CMOS image sensor was developed with a 0.18μm CIS process. Through matching the noise bandwidth and the bandwidth of the amplifier, with the falling time period of the reset impulse 6μs, experimental results show the reset noise level can experience up to 25 dB reduction. The proposed CMOS image sensor meets the demand of applications in high speed security surveillance systems, especially in low illumination.
An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel.Experimental results show the measured pinch-off voltage is consistent with theoretical prediction.This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sensor.
A wide-dynamic-range CMOS image sensor（CIS） based on synthesis of a long-time and a short-time exposure signal in the floating diffusion（FD） of a five-transistor active pixel is proposed.With optimized pixel operation,the response curve is compressed and a wide dynamic range image is obtained.A prototype wide-dynamic-range CMOS image sensor was developed with a 0.18μm CIS process.With the double exposure time 2.4 ms and 70 ns,the dynamic range of the proposed sensor is 80 dB with 30 frames per second（fps）.The proposed CMOS image sensor meets the demands of applications in security surveillance systems.
