Antimony ions were implanted into ZnMnO films grown on silicon （Si） by radio- frequency magnetron sputtering. The implanted samples were treated by rapid thermal annealing and investigated by X-ray photoelectron spectroscopy, X-ray diffraction and Raman scattering. In the wurtzite of ZnMnO, both manganese （Mn） and stibium （Sb） substituted the lattice position of zinc （Zn）. The ZnMnO films were characterized by Raman scattering at 522 cm-1, attributed to a local vibration of Mn. After implantation with Sb ions, two new peaks 681 cm^-1 and 823 cm^-1 were observed in the ZnMnO films, as a result of ion-induced damage to the lattice.
A home-made electron source assisted medium-frequency （MF） magnetron sputter- ing system was used to deposit thick CrN films on silicon and tungsten carbide substrates at various nitrogen flow rates with a fixed total pressure （0.3 Pa） and MF power （11.2 kW）. Result from scanning electron microscopy showed that the deposited CrN films have clear columnar struc- ture, and X-ray diffraction revealed a preferred orientation of CrN （200） for samples prepared at a rate of N2/（N2＋Ar） below 60%, whereas those prepared at higher N2/（N2＋Ar） rate are dom- inated by Cr2N. Deposition rates up to 12.5 μm/h were achieved and the hardness of the CrN coatings were in a range of 11 GPa to 18 GPa.
