Frank’s theory describes that a screw dislocation will produce a pit on the surface,and has been evidenced in many material systems including GaN.However,the size of the pit calculated from the theory deviates significantly from experimental result.Through a careful observation of the variations of surface pits and local surface morphology with growing temperature and V/III ratio for c-plane GaN,we believe that Frank’s model is valid only in a small local surface area where thermodynamic equilibrium state can be assumed to stay the same.If the kinetic process is too vigorous or too slow to reach a balance,the local equilibrium range will be too small for the center and edge of the screw dislocation spiral to be kept in the same equilibrium state.When the curvature at the center of the dislocation core reaches the critical value 1/r0,at the edge of the spiral,the accelerating rate of the curvature may not fall to zero,so the pit cannot reach a stationary shape and will keep enlarging under the control of minimization of surface energy to result in a large-sized surface pit.
Ga N高电子迁移率晶体管(HEMT)具有大的禁带宽度、高电子饱和速度、异质结界面的高二维电子气浓度、高击穿电压以及高的热导率,这一系列特性使它在高频、高功率、高温等领域得到了广泛的认可。本文首先论述了制约氮化镓高电子迁移率晶体管器件性能提高所遇到的问题及解决方法;然后,着重从优化材料结构设计和器件结构设计的角度,阐述了氮化镓高电子迁移率晶体管器件在高频高功率领域的最新研究进展;最后,讨论了器件进一步发展的方向。
