A single crystal of Li3Ba2Ho3（WO4）8 was obtained from a flux of Li2WO4 under an air atmosphere. The structure of the pure crystal was determined by single-crystal X-ray diffraction method. It crystallizes in the monoclinic system, space group C2/c with a = 5.240（4）, b = 12.790（10）, c = 19.247（15）, β = 91.921（15）°, V = 1289.1（18）3, Z = 2, Mr = 2773.09, Dc = 7.144 g/cm3, μ = 47.732 mm-1, Rint = 0.0693, F（000） = 2340, the final R = 0.0472 and wR = 0.1221 for 1535 observed reflections （I 2σ（I））. The Li3Ba2Ho3（WO4）8 has a high structure disorder with one 8f site shared by Li（1） and Ho ions with occupancy of 0.25 and 0.75, respectively. The fundamental structure is constituted by distorted square antiprisms Ho/Li（1）O8 with C1 symmetry, distorted Li（2）O6 octahedra and BaO10 polyhedra. The optical properties were investigated by IR and absorption spectroscopy, and the emission cross sections and gain cross sections of 5I7 → 5I8 of Ho3＋ were calculated.
The subsolidus phase relations of the ZnO-BaO-V2O5 ternary systems were investigated by means of X-ray diffraction analysis. There are three ternary compounds, nine binary compounds and sixteen 3-phase regions found in this system. The crystal structure of the ternary compound Ba2ZnV2O8 was refined by Rietveld profile fitting method and the powder diffraction pattern is given. A new ternary compound Ba3.4Zn0.8V4O14.2 has been found by the powder diffraction pattern.
Zinc oxide,a wide band-gap semiconductor,has shown extensive potential applications in high-efficiency semiconductor photoelectronic devices,semiconductor photocatalysis,and diluted magnetic semiconductors.Due to the undisputed lattice integrity,ZnO single crystals are essential for the fabrication of high-quality ZnO-based photoelectronic devices,and also believed to be ideal research subjects for understanding the underlying mechanisms of semiconductor photocatalysis and diluted magnetic semiconductors.This review,which is organized in two main parts,introduces the recent progress in growth,basic characterization,and device development of ZnO single crystals,and some related works in our group.The first part begins from the growth of ZnO single crystal,and summarizes the fundamental and applied investigations based on ZnO single crystals.These works are composed of the fabrication of homoepitaxial ZnO-based photoelectronic devices,the research on the photocatalysis mechanism,and dilute magnetic mechanism.The second part describes the fabrication of highly thermostable n-type ZnO with high mobility and high electron concentration through intentional doping.More importantly,in this part,a conceptual approach for fabricating highly thermostable p-type ZnO materials with high mobility through an integrated three-step treatment is proposed on the basis of the preliminary research.
Bismuth-containing semiconductor material is a hot topic in photocatalysts because of its effective absorption under the visible light. In this paper, we expect to explore a new bismuth-based photocatalyst by studying the subsolidus phase relations of the Bi2O3-Fe2O3-La2O3 system. The X-ray diffraction data shows that in this ternary system the ternary compound does not exist, while seven binary compounds （including one solid solution series Bi1-xLaxO1.5 with 0.167 〈 x 〈 0.339） are obtained and eight compatibility triangles are determined.
