In this paper we report the leakage current, ferroelectric and piezoelectric properties of the YFe O3 film with hexagonal structure, which was fabricated on Si（111） substrate by a simple sol-gel method. The leakage current test shows good characteristics as the leakage current density is 5.4 × 10^-6A/cm^2 under 5 V. The dominant leakage mechanism is found to be an Ohmic behavior at low electric field and space-charge-limited conduction at high electric field region. The P–E measurements show ferroelectric hysteresis loops with small remnant polarization and coercive field at room temperature.The distinct and switchable domain structures on the nanometer scale are observed by piezoresponse force microscopy,which testifies to the ferroelectricity of the YFe O3 film further.
ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm^2 and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures＇ photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.
The transport properties and magnetoresistance of electron-doped manganate / insulator composites （Lao.sTeo.2MnO3）l-x/（ZrO2）x （x = 0, 0.3, and 0.5） are investigated. It is found that the metal-insulator transition temperature of this system shifts to a lower value as the ZrO2 content increases. The introduction of ZrO2 enhances both the domain scattering and electron relative scattering in the metal transport region. In the adiabatic small polaron hopping transport region, the thermal activation energy seems invariable regardless of the ZrO2 content. The applica- tion of a magnetic field promotes the charge transportation capabilities of the composites, and the magnetoresistance is enhanced with an increase of the ZrO2 content. This could be attributed to the more remarkable modification effect of magnetic field on ordering degree in the composites than in pure Lao.sTe0.2MnO3.
Multiferroic materials,showing the coexistence and coupling of ferroelectric and magnetic orders,are of great technological and fundamental importance.However,the limitation of single phase multiferroics with robust magnetization and polarization hinders the magnetoelectric effect from being applied practically.Magnetic frustration,which can induce ferroelectricity,gives rise to multiferroic behavior.In this paper,we attempt to construct an artificial magnetically frustrated structure comprised of manganites to induce ferroelectricity.A disordered stacking of manganites is expected to result in frustration at interfaces.We report here that a tri-color multilayer structure comprised of non-ferroelectric La;Ca;MnO;（A）/Pr;Ca;MnO;（B）/Pr;Sr;MnO;（C） layers with the disordered arrangement of ABC-ACBCAB-CBA-BAC-BCA is prepared to form magnetoelectric multiferroics.The multilayer film exhibits evidence of ferroelectricity at room temperature,thus presenting a candidate for multiferroics.
In this paper,we introduce different forms of mobility into a quantitative phase-field model to produce arbitrary Ehrlich-Schwoebel(ES)effects.Convergence studies were carried out in the one-side step-flow model,which showed that the original mobility not only induces the ES effect,but also leads to larger numerical instability with increase of the step width.Thus,another modified form of the ES barrier is proposed,and is found to be more suitable for large-scale simulations.Model applications were performed on the wedding-cake structure,coarsening and coalescence of islands and spiral growth.The results show that the ES barrier exhibits more significant kinetic effects at the larger deposition rates by limiting motions of atoms on upper steps,leading to aggregation on the top layers,as well as the roughening of growing surfaces.
DONG Xiang LeiXING HuiSHA ShaCHEN Chang LeNIU Li WeiWANG Jian YuanJIN Ke Xin
