A single crystalline Mg2Si film was formed by solid phase reaction （SPR） of a Si（111） substrate with an Mg overlayer capped with an oxide layer（s）,which was enhanced by post annealing from room temperature to 100℃ in a molecular beam epitaxy （MBE） system.The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300℃,450℃ and 650℃,respectively.The Mg2Si film stayed stable until the annealing temperature reached 450℃ then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.
