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国家自然科学基金(60606009)

作品数:6 被引量:0H指数:0
相关作者:黄煜梅洪志良何济柔沈维纶高小平更多>>
相关机构:复旦大学更多>>
发文基金:国家自然科学基金更多>>
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A low-power monolithic CMOS transceiver for 802.11b wireless LANs
2009年
A single-chip low-power transceiver IC operating in the 2.4 GHz ISM band is presented. Designed in 0.18μm CMOS, the transceiver system employs direct-conversion architecture for both the receiver and transmitter to realize a fully integrated wireless LAN product. A sigma-delta (∑△) fractional-N frequency synthesizer provides on-chip quadrature local oscillator frequency. Measurement results show that the receiver achieves a maximum gain of 81 dB and a noise figure of 8.2 dB, the transmitter has maximum output power of -3.4 dBm and RMS EVM of 6.8%. Power dissipation of the transceiver is 74 mW in the receiving mode and 81 mW in the transmitting mode under a supply voltage of 1.8 V, including 30 mW consumed by the frequency synthesizer. The total chip area with pads is 2.7 × 4.2 mm^2.
李伟男夏玲琍郑永正黄煜梅洪志良
关键词:DIRECT-CONVERSIONTRANSCEIVER
用于802.11b无线局域网的2.4 GHz CMOS发送器(英文)
2008年
采用0.18μm CMOS工艺设计并实现了一个用于IEEE 802.11 b无线局域网的射频发送芯片.该芯片采用了直接转换的架构来最大限度地减少片上和片外的元器件,从而达到低功耗、低成本的目的.当以0 dBm的功率发送11 Mb/s的数据时,发送机的误差矢量幅度的峰值(peak EVM)小于13%(rms值约为7.24%),并且发送信号频谱满足802.11 b的频谱罩要求.整个芯片的面积包括pads为2.5 mm×2 mm,由1.8 V单电源供电,功耗为63 mW.
王颖何济柔高小平沈维纶黄煜梅洪志良
关键词:IEEE802.11B无线局域网
A 3.96 GHz phase-locked loop for mode-1 MB-OFDM UWB hopping carrier generation
2009年
A fully integrated phase-locked loop(PLL) is presented for a single quadrature output frequency of 3.96 GHz.The proposed PLL can be applied to mode-1 MB-OFDM UWB hopping carrier generation.An adaptive frequency calibration loop is incorporated into the PLL.The capacitance area in the loop filter is largely reduced through a capacitor multiplier.Implemented in a CMOS process, this PLL draws 13.0 mA current from a single 1.2 V supply while occupying 0.55 mm2 die area.Measurement results show that the PLL achieves a phase noise of-70 dBc/Hz at 10 kHz offset and-113 dBc/Hz at 1 MHz offset.The integrated RMS jitter from 1 kHz to 10 MHz is 2.2 ps.The reference spur level is less than-68 dBc.
郑永正李伟男夏玲琍黄煜梅洪志良
A low power 3-5 GHz CMOS UWB receiver front-end
2009年
A novel low power RF receiver front-end for 3-5 GHz UWB is presented. Designed in the 0.13μm CMOS process, the direct conversion receiver features a wideband balun-coupled noise cancelling transconductance input stage, followed by quadrature passive mixers and transimpedance loading amplifiers. Measurement results show that the receiver achieves an input return loss below -8.5 dB across the 3.1-4.7 GHz frequency range, maximum voltage conversion gain of 27 dB, minimum noise figure of 4 dB, IIP3 of -11.5 dBm, and IIP2 of 33 dBm. Working under 1.2 V supply voltage, the receiver consumes total current of 18 mA including 10 mA by on-chip quadrature LO signal generation and buffer circuits. The chip area with pads is 1.1 × 1.5 mm^2.
李伟男黄煜梅洪志良
关键词:UWB
应用于802.11b无线局域网的低噪声高线性度的CMOS射频接收机(英文)
2008年
实现了一个单片集成、直接转换结构的2.4GHz CMOS接收机.这个正交接收机作为低成本方案应用于802.11b无线局域网系统,所处理的数据传输率为该系统的最大速率——11Mbps.基于系统设计以及低噪声高线性度考虑,设计了低噪声放大器、直接转换混频器、增益可变放大器、低通滤波器、直流失调抵消电路及其他辅助电路.该芯片采用中芯国际0.18μm 1p6m RF CMOS工艺流片,所测的接收机性能如下:噪声系数为4.1dB,高增益设置下低噪声放大器与混频器的输入三阶交调点为-7.5dBm,整个接收机的输入三阶交调点为-14dBm,相邻信道干扰抑制能力在距中心频率30MHz处达到53dBc,输出直流失调电压小于5mV.该接收机采用1.8V电源电压,I,Q两路消耗的总电流为44mA.
黄煜梅王静光王金菊洪志良
关键词:无线局域网混频器
A fast-hopping 3-band CMOS frequency synthesizer for MB-OFDM UWB system
2009年
A fast-hopping 3-band (mode 1) multi-band orthogonal frequency division multiplexing ultra-wideband frequency synthesizer is presented. This synthesizer uses two phase-locked loops for generating steady frequencies and one quadrature single-sideband mixer for frequency shifting and quadrature frequency generation. The generated carriers can hop among 3432 MHz, 3960 MHz, and 4488 MHz. Implemented in a 0.13 μm CMOS process, this fully integrated synthesizer consumes 27 mA current from a 1.2 V supply. Measurement shows that the out-of-band spurious tones are below -50 dBc, while the in-band spurious tones are below -34 dBc. The measured hopping time is below 2 ns. The core die area is 1.0 ×1.8 mm^2.
郑永正夏玲琍李伟男黄煜梅洪志良
关键词:ULTRA-WIDEBANDCMOS
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