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国家重点基础研究发展计划(2012CB921303)

作品数:8 被引量:6H指数:1
相关作者:钟建新彭琼李金唐超杨红更多>>
相关机构:湘潭大学国防科学技术大学吉首大学更多>>
发文基金:国家自然科学基金国家重点基础研究发展计划湖南省教育厅科研基金更多>>
相关领域:理学一般工业技术电气工程更多>>

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8 条 记 录,以下是 1-8
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Spin gapless armchair graphene nanoribbons under magnetic field and uniaxial strain
2013年
Using Green's function method, we investigate the spin transport properties of armchair graphene nanoribbons (AG- NRs) under magnetic field and uniaxial strain. Our results show that it is very difficult to transform narrow AGNRs directly from semiconductor to spin gapless semiconductors (SGS) by applying magnetic fields. However, as a uniaxial strain is exerted on the nanoribbons, the AGNRs can transform to SGS by a small magnetic field. The combination mode be- tween magnetic field and uniaxial strain displays a nonmonotonic arch-pattern relationship. In addition, we find that the combination mode is associated with the widths of nanoribbons, which exhibits group behaviors.
侯海平谢月娥陈元平欧阳滔葛青霞钟建新
关键词:GRAPHENETIGHT-BINDING
Effective spin dephasing mechanism in confined two-dimensional topological insulators
2016年
A Kramers pair of helical edge states in quantum spin Hall effect (QSHE) is robust against normal dephasing but not robust to spin dephasing. In our work, we provide an effective spin dephasing mechanism in the puddles of two-dimensional (2D) QSHE, which is simulated as quantum dots modeled by 2D massive Dirac Hamiltouian. We demonstrate that the spin dephasing effect can originate from the combination of the Rashba spin-orbit coupling and electron-phonon interaction, which gives rise to inelastic backscattering in edge states within the topological insulator quantum dots, although the time-reversal symmetry is preserved throughout. Finally, we discuss the tunneling between extended helical edge states and local edge states in the QSH quantum dots, which leads to backscattering in the extended edge states. These results can explain the more robust edge transport in InAs/GaSb QSH systems.
JunJie QiHaiWen LiuHua JiangXinCheng Xie
拓扑绝缘体Bi_2Se_3中层堆垛效应的第一性原理研究
2014年
运用第一性原理方法,研究了拓扑绝缘体Bi_2Se_3块体和薄膜中的层堆垛对其结构、电子态、拓扑态和自旋劈裂的影响.发现不同的堆垛会引起Bi_2Se_3层间的相互作用,改变系统的中心对称性.块体的ABC和AAA堆垛都具有中心对称性和相似的能带结构.ABA堆垛破坏了体系的中心对称性,能带发生很大改变,并且产生了很大的能带自旋劈裂.用能带反转的方法判定体系的拓扑相,在不同堆垛的Bi_2Se_3块体中,考虑自旋轨道耦合时都发生了能带反转,因而具有不同堆垛的Bi2Se3仍是拓扑绝缘体.进一步研究了Bi_2Se_3薄膜中的堆垛效应,发现非中心对称的ABA堆垛在Bi_2Se_3薄膜中引起明显的自旋劈裂,并且提出和验证了用应变调控自旋劈裂的方法.
陈艳丽彭向阳杨红常胜利张凯旺钟建新
关键词:拓扑绝缘体自旋轨道耦合
Spin-orbit coupling and spin current in mesoscopic devices被引量:1
2013年
Recently,the spin-orbit coupling and spin current in nanodevice have been investigated extensively.In this paper,we review the recent progresses in this field.We introduce the real space Hamiltonian and the second quantization Hamiltonian of a typical quantum transport mesoscopic device,metal-QD-metal configuration,containing the spin-orbit interaction,e-e interactions,and magnetic field.Some noteworthy effects(e.g.,the spin-polarized current,spin accumulation,persistent spin current) originated from the spin-orbit interaction are reviewed,and the electric field induced by spin-current is mentioned.Lastly,we introduce some unsolved problems and prospects in this field.
XING YanXiaSUN QingFeng
Carbon matrix/SiNWs heterogeneous block as improved reversible anodes material for lithium ion batteries
2014年
A novel carbon matrix/silicon nanowires(SiNWs) heterogeneous block was successfully produced by dispersing SiNWs into templated carbon matrix via a modified evaporation induced self-assembly method. The heterogeneous block was determined by X-ray diffraction, Raman spectra and scanning electron microscopy. As an anode material for lithium batteries, the block was investigated by cyclic voltammograms(CV), charge/discharge tests, galvanostatic cycling performance and A. C. impedance spectroscopy. We show that the SiNWs disperse into the framework, and are nicely wrapped by the carbon matrix. The heterogeneous block exhibits superior electrochemical reversibility with a high specific capacity of 529.3 mAh/g in comparison with bare SiNWs anode with merely about 52.6 mAh/g capacity retention. The block presents excellent cycle stability and capacity retention which can be attributed to the improvement of conductivity by the existence of carbon matrix and the enhancement of ability to relieve the large volume expansion of SiNWs during the lithium insertion/extraction cycle. The results indicate that the as-prepared carbon matrix/SiNWs heterogeneous block can be an attractive and potential anode material for lithium-ion battery applications.
Yao WangLong RenYundan LiuXuejun LiuKai HuangXiaolin WeiJun LiXiang QiJianxin Zhong
Hydrothermal exfoliated molybdenum disulfide nanosheets as anode material for lithium ion batteries被引量:4
2014年
Ultrathin MoS2 nanosheets were prepared in high yield using a facile and effective hydrothermal intercalation and exfoliation route. The products were characterized in detail using X-ray diffraction, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy. The results show that the high yield of MoS2 nanosheets with good quality was successfully achieved and the dimensions of the immense nanosheets reached 1 μm-2/zm. As anode material for Li-ion batteries, the as-prepared MoS2 nanosheets electrodes exhibited a good initial capacity of 1190 mAh.g-l and excellent cyclic stability at constant current density of 50 mA.g-1. After 50 cycles, it still delivered reversibly sustained high capacities of 750 mAh.g-1.
Yundan LiuLong RenXiang QiLiwen YangJun LiYao WangJianxin Zhong
关键词:NANOSHEETSEXFOLIATION
MoSi_2薄膜电子性质的第一性原理研究
2015年
采用第一性原理计算方法,研究了四方Mo Si2薄膜的电子性质.计算结果表明,各种厚度的薄膜都是金属性的,并且随着厚度的增加,其态密度与能带结构都逐渐趋近于Mo Si2块体的特性.通过对Mo Si2薄膜磁性的分析,发现三个原子层厚的薄膜具有磁性,其原胞净磁矩为0.33μB;而当薄膜的厚度大于三个原子层时,薄膜不具有磁性.此外,进一步对单侧加氢饱和以及双侧加氢饱和结构下三原子层Mo Si2薄膜的电子性质进行了研究,发现单侧加氢饱和的三原子层Mo Si2薄膜具有磁性,其原胞净磁矩为0.26μB,而双侧加氢饱和三原子层Mo Si2薄膜是非磁性的.双侧未饱和与单侧加氢饱和的三原子层Mo Si2薄膜的自旋极化率分别为30%和33%.这些研究结果表明,三原子层厚的Mo Si2超薄薄膜在悬空或者生长于基底之上时具有金属磁性,预示着它在纳米电子学和自旋电子学器件等方面都有潜在的应用前景.
彭琼何朝宇李金钟建新
关键词:第一性原理计算电子性质硅化钼
应变下氮和硼替位掺杂石墨烯的结构与电子性质被引量:1
2016年
采用第一性原理计算方法,研究了氮(N)和硼(B)替位掺杂石墨烯在加载应变情况下的结构和电子性质.计算结果表明(采用6×6超原胞),对于纯石墨烯,当应变大于临界应变30%时发生从弹性应变至非弹性应变的转变,体系总能在转变处发生突变.而N和B掺杂石墨烯的临界应变分别变为17.6%和17.4%,这表明掺杂石墨烯的弹性应变范围大幅减小.通过研究纯石墨烯和N/B替位掺杂石墨烯的电子性质,发现纯石墨烯在对称应变下仍为零带隙,而掺杂后费米能级处出现电子态,体系转变为金属,并且发现应变可以调节掺杂石墨烯的费米能级但不能在狄拉克锥处打开带隙.
熊扬虹彭琼李金张春小唐超钟建新
关键词:第一性原理石墨烯掺杂
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